VN3205N3-P013-G Supertex, VN3205N3-P013-G Datasheet

VN3205N3-P013-G

Manufacturer Part Number

VN3205N3-P013-G

Description

MOSFET 50V 0.3Ohm

Manufacturer

Supertex

Datasheet

1.VN3205N3-P002-G.pdf (6 pages)

Specifications of VN3205N3-P013-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

50 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.2 A

Resistance Drain-source Rds (on)

0.3 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

25 ns

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Features

Applications

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Doc.# DSFP-VN3205

C101612

Ordering Information

For packaged products, -G indicates package is RoHS compliant (‘Green’).

TO-92 taping specifications and winding styles per EIA-468 Standard.

Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF32 for layout and dimensions.

Typical Thermal Resistance

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

VN3205N3-G

VN3205N3-G P002

VN3205N3-G P003

VN3205N3-G P005

VN3205N3-G P013

VN3205N3-G P014

VN3205N8-G

VN3205NW

VN3205NJ

VN3205ND

Package

3-Lead TO-92

3-Lead TO-243AA (SOT-89)

Part Number

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

Excellent thermal stability

Integral source-drain diode

High input impedance and high gain

Motor controls

Converters

Amplifiers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

ISS

and fast switching speeds

3-Lead TO-92

3-Lead TO-243AA (SOT-89)

Die in wafer form

Die on adhesive tape

Die in waffle pack

Package Option

132

133

N-Channel Enhancement-Mode

Vertical DMOS FETs

C/W

-55

C to +150

1000/Bag

2000/Reel

---

Packing

Value

±20V

DGS

DSS

General Description

This enhancement-mode (normally-off) transistor utilizes

a vertical DMOS structure and Supertex’s well-proven

silicon-gate manufacturing process. This combination

produces a device with the power handling capabilities of

bipolar transistors and with the high input impedance and

positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

Pin Configuration

Product Marking

Package may or may not include the following marks: Si or

Product Summary

DSS

(V)

/BV

VN2LW

Y Y W W

3 2 0 5

DGS

SiVN

TO-243AA (SOT-89) (N8)

DRAIN

W = Code for week sealed

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

SOURCE

(max) (Ω)

GATE

0.3

DS(ON)

DRAIN

= “Green” Packaging

SOURCE

DRAIN

GATE

Supertex inc.

www.supertex.com

(max) (V)

2.4

GS(th)

Related parts for VN3205N3-P013-G

VN3205N3-P013-G Summary of contents

Page 1

... Ordering Information Part Number Package Option VN3205N3-G 3-Lead TO-92 VN3205N3-G P002 VN3205N3-G P003 VN3205N3-G P005 3-Lead TO-92 VN3205N3-G P013 VN3205N3-G P014 VN3205N8-G 3-Lead TO-243AA (SOT-89) VN3205NW Die in wafer form VN3205NJ Die on adhesive tape VN3205ND Die in waffle pack For packaged products, -G indicates package is RoHS compliant (‘Green’). ...

Page 2

... 300 V = 0V, GS 120 25V 1.0MHz 25V 2.0A 10Ω GEN VDD Pulse R L Generator OUTPUT R GEN INPUT D.U.T. Supertex inc. www.supertex.com VN3205 I (A) DRM 8.0 8 Max Rating 5.0V = 1.5A = 0.75A = 3.0A = 1.5A = 3.0A = 2.0A ...

Page 3

... Saturation Characteristics 8.0 4 2.0 4.0 6.0 8.0 V (volts) DS Power Dissipation vs. Case Temperature 3.2 2.4 TO-243AA (T = 25°C) A 1.6 TO-92 0 100 125 Thermal Response Characteristics 1.0 0.8 TO-243AA 1.6W D 0.6 0.4 0.2 TO- 1. 0.001 0.01 0.1 1.0 t (seconds) p Supertex inc. VN3205 V = 10V 150 www.supertex.com ...

Page 4

... RSS On-Resistance vs. Drain Current 1 4. 10V GS 0.6 0.4 0 4.0 8 (amperes and R Variation with Temperature (th 10V, 3.0A DS(ON) 1.1 1.0 0 1.0mA GS(th) 0.8 0.7 - 100 Gate Drive Dynamic Characteristics 10V DS 8 40V DS 6.0 325 pF 4.0 2.0 215 1.0 2.0 3.0 4.0 Q (nanocoulombs) G Supertex inc. VN3205 20 1.6 1.4 1.2 1.0 0.8 0.6 150 5.0 www.supertex.com ...

Page 5

... MIN .170 Dimensions NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Doc.# DSFP-VN3205 C101612 Front View ...

Page 6

... JEDEC Registration TO-243, Variation AA, Issue C, July 1986. † This dimension differs from the JEDEC drawing Drawings not to scale. Supertex Doc. #: DSPD-3TO243AAN8, Version F111010. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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