VS-ST230C08C1 Vishay Semiconductors, VS-ST230C08C1 Datasheet - Page 3

• Manufacturer Part Number: VS-ST230C08C1
• Description: SCR Modules 410 Amp 800 Volt 780 Amp IT(RMS)
• Manufacturer: Vishay Semiconductors

Specifications of VS-ST230C08C1

• Product Category: SCR Modules
• On-state Rms Current (it Rms): 780 A
• Non Repetitive On-state Current: 5700 A
• Breakover Current Ibo Max: 5970 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 30 mA
• On-state Voltage: 1.69 V
• Holding Current (ih Max): 600 mA
• Gate Trigger Voltage (vgt): 3 V
• Gate Trigger Current (igt): 150 mA
• Maximum Operating Temperature: + 125 C
• Mounting Style: Chassis
• Package / Case: TO-200AB (A-PUK)
• Circuit Type: SCR
• Current Rating: 410 A
• Minimum Operating Temperature: - 40 C
• Factory Pack Quantity: 12

Note
• The table above shows the increment of thermal resistance R
Document Number: 94398
Revision: 11-Aug-08
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
DC gate voltage not to trigger
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to heatsink
Maximum thermal resistance,
case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
ΔR
CONDUCTION ANGLE
thJC
CONDUCTION
180°
120°
90°
60°
30°
SINGLE SIDE
SINUSOIDAL CONDUCTION
0.015
0.018
0.024
0.035
0.060
For technical questions, contact: [e-mail]
(Hockey PUK Version), 410 A
SYMBOL
SYMBOL
R
P
+ V
R
- V
P
V
V
T
thC-hs
G(AV)
I
I
thJ-hs
Phase Control Thyristors
I
GM
T
GD
GT
GM
Stg
GT
GD
GM
J
GM
DOUBLE SIDE
0.017
0.019
0.024
0.035
0.060
T
T
T
T
T
T
T
T
T
T
T
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
See dimensions - link at the end of datasheet
J
J
J
J
J
J
J
J
J
J
J
thJC
= T
= T
= T
= T
= T
= - 40 °C
= 25 °C
= 125 °C
= - 40 °C
= 25 °C
= 125 °C
J
J
J
J
J
when devices operate at different conduction angles than DC
maximum
maximum, t
maximum, f = 50 Hz, d% = 50
maximum, t
maximum, t
RECTANGULAR CONDUCTION
SINGLE SIDE
TEST CONDITIONS
TEST CONDITIONS
0.011
0.019
0.026
0.036
0.060
p
p
p
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
cathode applied
≤ 5 ms
≤ 5 ms
≤ 5 ms
DOUBLE SIDE
Vishay High Power Products
0.011
0.019
0.026
0.036
0.061
DRM
anode to
ST230CPbF Series
TEST CONDITIONS
T
J
= T
TYP.
180
2.9
1.8
1.2
J
90
40
- 40 to 125
- 40 to 150
TO-200AB (A-PUK)
VALUES
maximum
VALUES
0.033
0.017
(500)
4900
10.0
0.25
0.17
0.08
2.0
3.0
5.0
20
10
50
MAX.
150
www.vishay.com
3.0
-
-
-
-
UNITS
UNITS
UNITS
K/W
K/W
(kg)
mA
mA
°C
W
A
V
V
V
N
g
3