TN0604N3-P002-G Supertex, TN0604N3-P002-G Datasheet

TN0604N3-P002-G

Manufacturer Part Number

TN0604N3-P002-G

Description

MOSFET 40V 0.75Ohm

Manufacturer

Supertex

Datasheet

1.TN0604N3-P014-G.pdf (5 pages)

Specifications of TN0604N3-P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

40 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

7 A

Resistance Drain-source Rds (on)

0.75 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

25 ns

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Features

Applications

For packaged products, -G indicates package is RoHS compliant (‘Green’).

TO-92 taping specifications and winding styles per EIA-468 Standard.

Devices in Wafer / Die form are RoHS compliant (‘Green’).

Refer to Die Specification VF57 for layout and dimensions.

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Doc.# DSFP-TN0604

C082012

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

TN0604N3-G

TN0604N3-G P002

TN0604N3-G P003

TN0604N3-G P005

TN0604N3-G P013

TN0604N3-G P014

TN5704NW

TN5704NJ

TN5704ND

Part Number

►

Low threshold (1.6V max.)

High input impedance

Low input capacitance (140pF typical)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Package Option

3-Lead TO-92

Die in wafer form

Die on adhesive tape

Die in waffle pack

N-Channel Enhancement-Mode

Vertical DMOS FET

-55

C to +150

1000/Bag

2000/Reel

Packing

---

Value

±20V

DGS

DSS

General Description

This

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven,

combination produces a device with the power handling

capabilities of bipolar transistors and the high input impedance

and positive temperature coefficient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a wide

range of switching and amplifying applications where very

low threshold voltage, high breakdown voltage, high input

impedance, low input capacitance, and fast switching speeds

are desired.

Product Summary

Pin Configuration

Product Marking

Package may or may not include the following marks: Si or

DSS

(V)

low

/BV

DGS

threshold,

Y Y W W

0 6 0 4

S iT N

silicon-gate

(max) (Ω)

0.75

DS(ON)

YY = Year Sealed

WW = Week Sealed

SOURCE

TO-92 (N3)

enhancement-mode

manufacturing

= “Green” Packaging

DRAIN

GATE

(min) (A)

D(ON)

4.0

Supertex inc.

www.supertex.com

process.

TN0604

(normally-off)

(max) (V)

1.6

GS(th)

This

Related parts for TN0604N3-P002-G

TN0604N3-P002-G Summary of contents

Page 1

... Ordering Information Part Number Package Option TN0604N3-G 3-Lead TO-92 TN0604N3-G P002 TN0604N3-G P003 TN0604N3-G P005 3-Lead TO-92 TN0604N3-G P013 TN0604N3-G P014 TN5704NW Die in wafer form TN5704NJ Die on adhesive tape TN5704ND Die in waffle pack For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-92 taping specifications and winding styles per EIA-468 Standard. ...

Page 2

... V = 20V 0.5A 25Ω GEN - 20 1 300 - 0V VDD Pulse R L Generator R GEN INPUT D.U.T. Supertex inc. TN0604 I DRM (A) 4.6 = 2.0mA D = 1.0mA D = 1.0mA Max Rating DS = 125° 20V DS = 20V DS = 0.75A 1.0A SD OUTPUT www.supertex.com ...

Page 3

... Power Dissipation vs. Ambient Temperature 2 - 1.0 125 C O 5.0 6.0 7.0 1.0 0.8 0.6 0.4 0.2 10 100 3 Saturation Characteristics 2.0 4.0 6.0 8.0 V (volts) DS TO- 100 125 Thermal Response Characteristics TO- 1. 0.001 0.01 0.1 1.0 t (seconds) P Supertex inc. TN0604 V = 10V 150 10 www.supertex.com ...

Page 4

... RSS On-Resistance vs. Drain Current 2 5. 1. 5.0 I (amperes and R Variation with Temperature (th) DS 1.4 V @1.0mA (th) 1.2 R @10V, 1.5A DS 1.0 0.8 0.6 - 100 Gate Drive Dynamic Characteristics 10V DS 8.0 170 pF 170 pF 6 40V DS 4.0 2 1.0 2.0 3.0 4.0 Q (nanocoulombs) G Supertex inc. TN0604 10 1.4 1.2 1.0 0.8 0.6 150 5.0 www.supertex.com ...

Page 5

... This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives Supertex inc ...

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