TN2540N3-P002-G Supertex, TN2540N3-P002-G Datasheet

TN2540N3-P002-G

Manufacturer Part Number

TN2540N3-P002-G

Description

MOSFET 400V 12Ohm

Manufacturer

Supertex

Datasheet

1.TN2540N3-P003-G.pdf (6 pages)

Specifications of TN2540N3-P002-G

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

400 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

175 mA

Resistance Drain-source Rds (on)

12 Ohms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Package / Case

TO-92

Minimum Operating Temperature

- 55 C

Power Dissipation

1 W

Factory Pack Quantity

2000

Typical Turn-off Delay Time

25 ns

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Features

►

Applications

►

Ordering Information

-G indicates package is RoHS compliant (‘Green’)

* MIL visual screening available

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Distance of 1.6mm from case for 10 seconds.

Low threshold (2.0V max.)

High input impedance

Low input capacitance (125pF max.)

Fast switching speeds

Low on-resistance

Free from secondary breakdown

Low input and output leakage

Complementary N- and P-channel devices

Logic level interfaces - ideal for TTL and CMOS

Solid state relays

Battery operated systems

Photo voltaic drives

Analog switches

General purpose line drivers

Telecom switches

Device

TN2540

TN2540N3-G

TO-92

TO-243AA (SOT-89)

●

Package Options

N-Channel Enhancement-Mode

Vertical DMOS FET

1235 Bordeaux Drive, Sunnyvale, CA 94089

TN2540N8-G

-55

C to +150

300

Value

±20V

DGS

DSS

TN2540ND

Pin Conﬁgurations

Product Marking

Die*

General Description

This low threshold, enhancement-mode (normally-off)

transistor utilizes a vertical DMOS structure and Supertex’s

well-proven, silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

DRAIN

TO-92 (N3)

TN5DW

●

2 5 4 0

Y Y W W

Tel: 408-222-8888

DSS

SOURCE

400

(V)

/BV

TO-243AA (SOT-89) (N8)

T N

GATE

DGS

W = Code for week sealed

YY = Year Sealed

WW = Week Sealed

TO-92 (N3)

(max)

DS(ON)

(Ω)

●

= “Green” Packaging

TO-243AA (SOT-89) (N8)

= “Green” Packaging

www.supertex.com

DRAIN

GATE

(min)

D(ON)

1.0

(A)

DRAIN

TN2540

SOURCE

(max)

2.0

GS(th)

(V)

Related parts for TN2540N3-P002-G

TN2540N3-P002-G Summary of contents

Page 1

... General purpose line drivers ► Telecom switches Ordering Information Package Options Device TO-92 TO-243AA (SOT-89) TN2540 TN2540N3-G -G indicates package is RoHS compliant (‘Green’) * MIL visual screening available Absolute Maximum Ratings Parameter Drain-to-source voltage Drain-to-gate voltage Gate-to-source voltage Operating and storage temperature ...

Page 2

... GEN - 300 - 0V PULSE GENERATOR OUTPUT R GEN D.U.T. INPUT ● Tel: 408-222-8888 ● www.supertex.com TN2540 I I † DR DRM (mA) (A) 175 2.0 260 1.8 = 100µA = 1.0mA D = 1.0mA Max Rating DS = 125°C = 25V DS = 25V DS = 150mA D = 500mA D = 500mA ...

Page 3

... Typical Performance Curves ° ° ° ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 3 ° ° ● Tel: 408-222-8888 ● www.supertex.com TN2540 ...

Page 4

... 10V 0.4 0.8 1.2 1.6 I (amperes and R Variation with Temperature (th 10V, 0.5A DS(ON 1mA (th) 1.2 1.0 0.8 0.6 - 100 ° Gate Drive Dynamic Characteristics 10V 40V 4 DS 260 pF 2 95pF 0 0 0.4 0.8 1.2 1.6 Q (nanocoulombs) G ● Tel: 408-222-8888 ● www.supertex.com TN2540 2.0 2.5 2.0 1.5 1.0 0.5 0 150 2.0 ...

Page 5

... NOM - (inches) MAX .210 JEDEC Registration TO-92. * This dimension is not speciﬁed in the original JEDEC drawing. The value listed is for reference only. † This dimension is a non-JEDEC dimension. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version D080408 Front View ...

Page 6

... Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship ...

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