AT28C010-12LM/883 Atmel, AT28C010-12LM/883 Datasheet - Page 2

• Manufacturer Part Number: AT28C010-12LM/883
• Description: IC EEPROM 1MBIT 120NS 44LCC
• Manufacturer: Atmel

Specifications of AT28C010-12LM/883

• Format - Memory: EEPROMs - Parallel
• Memory Type: EEPROM
• Memory Size: 1M (128K x 8)
• Speed: 120ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 44-LCC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Absolute Maximum Ratings*
2
Temperature Under Bias ............................... -55°C to +125°C
Storage Temperature..................................... -65°C to +150°C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
AT28C010 Military
Description
The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem-
ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with
Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with
power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is
less than 300 μA.
The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for
external components. The device contains a 128-byte page register to allow writing of up to 128-
bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally
latched, freeing the address and data bus for other operations. Following the initiation of a write
cycle, the device will automatically write the latched data using an internal control timer. The end
of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has
been detected a new access for a read or write can begin.
Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device
utilizes internal error correction for extended endurance and improved data retention character-
istics. An optional software data protection mechanism is available to guard against inadvertent
writes. The device also includes an extra 128-bytes of EEPROM for device identification or
tracking.
Block Diagram
CC
+ 0.6V
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
0010F–PEEPR–02/10