VS-16TTS08PBF Vishay Semiconductors, VS-16TTS08PBF Datasheet

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VS-16TTS08PBF

Manufacturer Part Number
VS-16TTS08PBF
Description
SCRs 800 Volt 16 Amp
Manufacturer
Vishay Semiconductors
Datasheet
1.VS-16TTS08PBF.pdf (7 pages)

Specifications of VS-16TTS08PBF

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
200 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.4 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
60 mA
Holding Current (ih Max)
100 mA
Mounting Style
Through Hole
Package / Case
TO-220AC
Note
(1)
Revision: 10-Nov-11
PRODUCT SUMMARY
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
Capacitive input filter T
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
I
V
I
V
dV/dt
dI/dt
T
VOLTAGE RATINGS
PART NUMBER
VS-16TTS08PbF, VS-16TTS08-M3
VS-16TTS12PbF, VS-16TTS12-M3
T(AV)
RMS
TSM
J
For higher voltage up to 1600 V contact factory
DRM
T
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
/V
Diode variation
TO-220AB
RRM
For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com,
V
Package
DRM
I
V
T(AV)
I
T
GT
TM
/V
J
www.vishay.com
RRM
A
High Voltage Phase Control Thyristor, 16 A
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
= 55 °C, T
J
Sinusoidal waveform
Range
10 A, T
Range
= 125 °C,
- 40 °C to 125 °C
TEST CONDITIONS
800 V, 1200 V
Single SCR
(1)
J
TO-220AB
1 (K)
= 25 °C
VS-16TTS..PbF Series, VS-16TTS..-M3 Series
60 mA
V
(A)
1.4 V
10 A
2
RRM
REVERSE VOLTAGE
(G) 3
SINGLE-PHASE BRIDGE
, MAXIMUM PEAK
1200
800
V
13.5
1
FEATURES
• Designed
• 125 °C max. operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
APPLICATIONS
• Typical usage is in input rectification crowbar (soft start)
DESCRIPTION
The VS-16TTS... high voltage series of silicon controlled
rectifiers are specifically designed for medium power
switching and phase control applications. The glass
passivation technology used has reliable operating up to
125 °C junction temperature.
JEDEC-JESD47
definition (-M3 only)
and AC switch in motor control, UPS, welding, and battery
charge
V
DRM
DIRECT VOLTAGE
THREE-PHASE BRIDGE
- 40 to 125
800/1200
VALUES
, MAXIMUM PEAK
200
500
150
1.4
10
16
www.vishay.com/doc?91000
1200
800
V
and
17
qualified
Vishay Semiconductors
DiodesEurope@vishay.com
according
Document Number: 94603
AT 125 °C
I
RRM
UNITS
V/μs
A/μs
mA
°C
UNITS
10
A
V
A
V
/I
DRM
A
to

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VS-16TTS08PBF Summary of contents

Page 1

... Note (1) For higher voltage up to 1600 V contact factory VOLTAGE RATINGS PART NUMBER VS-16TTS08PbF, VS-16TTS08-M3 VS-16TTS12PbF, VS-16TTS12-M3 Revision: 10-Nov-11 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-16TTS ...

Page 2

... Typical turn-off time Revision: 10-Nov-11 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-16TTS..PbF Series, VS-16TTS..-M3 Series SYMBOL TEST CONDITIONS °C, 180° conduction, half sine wave ...

Page 3

... Fig Current Rating Characteristics Revision: 10-Nov-11 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-16TTS..PbF Series, VS-16TTS..-M3 Series SYMBOL TEST CONDITIONS ...

Page 4

... Revision: 10-Nov-11 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-16TTS..PbF Series, VS-16TTS..-M3 Series 200 180 J 160 140 120 100 80 0 ...

Page 5

... ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R VS-16TTS08PbF VS-16TTS08-M3 VS-16TTS12PbF VS-16TTS12-M3 Dimensions Part marking information Revision: 10-Nov-11 For technical questions within your region: diodes-tech@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-16TTS ...

Page 6

... Dimensions define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline Outline Dimensions Vishay Semiconductors Thermal pad ( ...

Page 7

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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