VS-10RIA80 Vishay Semiconductors, VS-10RIA80 Datasheet - Page 5

• Manufacturer Part Number: VS-10RIA80
• Description: SCRs 800 Volt 10 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-10RIA80

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 240 A
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 10 mA
• Forward Voltage Drop: 1.75 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 130 mA
• Mounting Style: Stud
• Package / Case: TO-48
• Factory Pack Quantity: 100

Document Number: 93689
Revision: 06-Jun-08
Fig. 5 - Maximum Non-Repetitive Surge Current
Number Of Equal Amplitude Half Cycle Current Pulses (N)
200
190
180
170
160
150
140
130
120
110
100
90
1
10RIA Series
At Any Rated Load Condition And With
Rated V
35
30
25
20
15
10
45
40
35
30
25
20
15
10
RRM
5
0
5
0
0
0
RMS Limit
RMS Limit
Applied Following Surge.
10
180°
120°
2
90°
60°
30°
DC
180°
120°
Average On-state Current (A)
90°
60°
30°
5
Average On-state Current (A)
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Initial T = 125°C
4
For technical questions, contact: [e-mail]
10
6
J
Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
8
15
Medium Power Thyristors
10 12 14 16 18
Conduction Period
100
Conduction Angle
10RIA Series
T = 125°C
(Stud Version), 10 A
10RIA Series
T = 125°C
J
J
20
25
30
0
0
Maximum Allowable Ambient Temperature (°C)
Maximum Allowable Ambient Temperature (°C)
25
25
50
50
Fig. 6 - Maximum Non-Repetitive Surge Current
240
220
200
180
160
140
120
100
80
0.01
75
75
10RIA Series
Maximum Non Repetitive Surge Current
Of Conduction May Not Be Maintained.
100
100
Versus Pulse Train Duration. Control
Vishay Semiconductors
Pulse Train Duration (s)
125
125
0.1
Rated V
No Voltage Reapplied
10RIA Series
Initial T = 125°C
RRM
J
Reapplied
www.vishay.com
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