IS63LV1024-12KL-TR ISSI, Integrated Silicon Solution Inc, IS63LV1024-12KL-TR Datasheet - Page 4

• Manufacturer Part Number: IS63LV1024-12KL-TR
• Description: IC SRAM 1MBIT 12NS 32SOJ
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS63LV1024-12KL-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (128K x 8)
• Speed: 12ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-SOJ
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS63LV1024
IS63LV1024L
IS63LV1024 POWER SUPPLY CHARACTERISTICS
Notes:
1. At f = f
2. Typical values are measured at V
IS63LV1024L POWER SUPPLY CHARACTERISTICS
Notes:
1. At f = f
2. Typical values are measured at V
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
4
Symbol Parameter
I
I
I
I
Symbol Parameter
I
I
I
I
CC
SB
CC
SB
SB
SB
SB
SB
Symbol
C
C
1
1
2
1
1
2
IN
I/O
MAX
MAX
V
Supply Current
TTL Standby
Current
(TTL Inputs)
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
V
Supply Current
TTL Standby
Current
(TTL Inputs)
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
DD
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Operating
Operating
Parameter
Input Capacitance
Input/Output Capacitance
A
(1,2)
= 25°C, f = 1 MHz, V
Test Conditions
V
I
V
V
CE ≥ V
V
V
CE ≥ V
V
CE ≥ V
V
V
Test Conditions
V
I
V
V
CE ≥ V
V
V
CE ≥ V
V
CE ≥ V
V
V
OUT
OUT
DD
DD
IN
DD
IN
DD
IN
IN
DD
DD
IN
DD
IN
DD
IN
IN
= V
= V
≥ V
≤ 0.2V, f = 0
= V
= V
≥ V
≤ 0.2V, f = 0
= Max., CE = V
= Max.,
= Max.,
= Max.,
= Max., CE = V
= Max.,
= Max.,
= Max.,
= 0 mA, f = Max.
= 0 mA, f = Max.
IH
IH
IH
DD
DD
IH
IH
IH
DD
DD
IH
IH
DD
DD
, f = Max
, f = 0
, f = Max
, f = 0
or V
or V
or V
or V
– 0.2V,
– 0.2V, or
– 0.2V,
– 0.2V, or
= 3.3V, T
= 3.3V, T
IL
IL
IL
IL
DD
Ind. (@15 ns)
= 3.3V.
IL
IL
A
A
= 25
= 25
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
typ.
typ.
typ.
typ.
Integrated Silicon Solution, Inc. — www.issi.com —
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
o
o
(2)
(2)
(2)
(2)
C. Not 100% tested.
C. Not 100% tested.
Conditions
V
V
OUT
IN
= 0V
Min. Max.
= 0V
—
—
—
—
—
—
—
—
—
—
-8 ns
160
105
170
0.5
55
55
25
30
10
5
(1)
(1)
(Over Operating Range)
(Over Operating Range)
Min. Max.
Min. Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-10 ns
-8 ns
Max.
6
8
0.05
150
160
100
110
0.5
1.5
95
45
45
25
30
10
75
35
40
15
20
5
1
Min. Max.
Min. Max.
Unit
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
-12 ns
-10 ns
0.05
130
140
105
0.5
1.5
75
90
40
40
25
30
10
95
70
30
35
15
20
5
1
Min. Max.
—
—
—
—
—
—
—
—
—
—
-12 ns
1-800-379-4774
Unit
0.05
100
mA
mA
mA
mA
1.5
90
65
25
30
15
20
1
07/02/2010
Rev. O
Unit
mA
mA
mA
mA