IS61LV6416-10TI-TR ISSI, Integrated Silicon Solution Inc, IS61LV6416-10TI-TR Datasheet - Page 5

• Manufacturer Part Number: IS61LV6416-10TI-TR
• Description: IC SRAM 1MBIT 10NS 44TSOP
• Manufacturer: ISSI, Integrated Silicon Solution Inc

Specifications of IS61LV6416-10TI-TR

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 1M (64K x 16)
• Speed: 10ns
• Interface: Parallel
• Voltage - Supply: 3.135 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 44-TSOP II
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IS61LV6416
IS61LV6416L
AC TEST CONDITIONS
AC TEST LOADS
Integrated Silicon Solution, Inc.
Rev. I
11/22/05
Figure 1a.
READ CYCLE SWITCHING CHARACTERISTICS
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
Symbol
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
t
t
t
t
t
t
t
t
t
t
t
t
output loading specified in Figure 1a.
RC
OHA
ACE
DOE
HZOE
LZOE
HZCE
LZCE
HZB
LZB
AA
BA
OUTPUT
(2)
(2)
(2)
(2
3.3V
Parameter
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to High-Z Output
CE to Low-Z Output
LB, UB Access Time
LB, UB to High-Z Output
LB, UB to Low-Z Output
Including
jig and
scope
30 pF
319 Ω
353 Ω
See Figures 1a and 1b
0V to 3.0V
1.5V
Unit
3 ns
Min. Max.
—
—
—
—
—
8
3
0
0
3
0
0
-8 ns
—
—
—
—
—
8
8
5
5
4
6
4
(1)
(Over Operating Range)
Figure 1b.
Min. Max.
10
—
—
—
—
—
3
0
0
3
0
0
-10 ns
—
10
—
10
—
—
—
OUTPUT
5
5
5
6
5
3.3V
Min. Max.
12
—
—
—
—
—
3
0
0
3
0
0
-12 ns
Including
jig and
scope
5 pF
12
12
—
—
—
—
—
6
6
6
6
6
319 Ω
Unit
353 Ω
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ISSI
5
®
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