IS63LV1024L-10TLI ISSI, Integrated Silicon Solution Inc, IS63LV1024L-10TLI Datasheet - Page 4

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IS63LV1024L-10TLI

Manufacturer Part Number
IS63LV1024L-10TLI
Description
IC SRAM 1MBIT 10NS 32TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS63LV1024L-10TLI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
10ns
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-TSOP II
Density
1Mb
Access Time (max)
10ns
Sync/async
Asynchronous
Architecture
Not Required
Clock Freq (max)
Not RequiredMHz
Operating Supply Voltage (typ)
3.3V
Address Bus
17b
Package Type
TSOP-II
Operating Temp Range
-40C to 85C
Number Of Ports
1
Supply Current
160mA
Operating Supply Voltage (min)
3.15V
Operating Supply Voltage (max)
3.45V
Operating Temperature Classification
Industrial
Mounting
Surface Mount
Pin Count
32
Word Size
8b
Number Of Words
128K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IS63LV1024
IS63LV1024L
IS63LV1024 POWER SUPPLY CHARACTERISTICS
Notes:
1. At f = f
2. Typical values are measured at V
IS63LV1024L POWER SUPPLY CHARACTERISTICS
Notes:
1. At f = f
2. Typical values are measured at V
CAPACITANCE
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
4
Symbol Parameter
I
I
I
I
Symbol Parameter
I
I
I
I
CC
SB
CC
SB
SB
SB
SB
SB
Symbol
C
C
1
1
2
1
1
2
IN
I/O
MAX
MAX
V
Supply Current
TTL Standby
Current
(TTL Inputs)
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
V
Supply Current
TTL Standby
Current
(TTL Inputs)
TTL Standby
Current
(TTL Inputs)
CMOS Standby
Current
(CMOS Inputs)
DD
DD
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Operating
Operating
Parameter
Input Capacitance
Input/Output Capacitance
A
(1,2)
= 25°C, f = 1 MHz, V
Test Conditions
V
I
V
V
CE ≥ V
V
V
CE ≥ V
V
CE ≥ V
V
V
Test Conditions
V
I
V
V
CE ≥ V
V
V
CE ≥ V
V
CE ≥ V
V
V
OUT
OUT
DD
DD
IN
DD
IN
DD
IN
IN
DD
DD
IN
DD
IN
DD
IN
IN
= V
= V
≥ V
≤ 0.2V, f = 0
= V
= V
≥ V
≤ 0.2V, f = 0
= Max., CE = V
= Max.,
= Max.,
= Max.,
= Max., CE = V
= Max.,
= Max.,
= Max.,
= 0 mA, f = Max.
= 0 mA, f = Max.
IH
IH
IH
DD
DD
IH
IH
IH
DD
DD
IH
IH
DD
DD
, f = Max
, f = 0
, f = Max
, f = 0
or V
or V
or V
or V
– 0.2V,
– 0.2V, or
– 0.2V,
– 0.2V, or
= 3.3V, T
= 3.3V, T
IL
IL
IL
IL
DD
Ind. (@15 ns)
= 3.3V.
IL
IL
A
A
= 25
= 25
Com.
Com.
Com.
Com.
Com.
Com.
Com.
Com.
typ.
typ.
typ.
typ.
Integrated Silicon Solution, Inc. — www.issi.com —
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
Ind.
o
o
(2)
(2)
(2)
(2)
C. Not 100% tested.
C. Not 100% tested.
Conditions
V
V
OUT
IN
= 0V
Min. Max.
= 0V
-8 ns
160
105
170
0.5
55
55
25
30
10
5
(1)
(1)
(Over Operating Range)
(Over Operating Range)
Min. Max.
Min. Max.
-10 ns
-8 ns
Max.
6
8
0.05
150
160
100
110
0.5
1.5
95
45
45
25
30
10
75
35
40
15
20
5
1
Min. Max.
Min. Max.
Unit
pF
pF
-12 ns
-10 ns
0.05
130
140
105
0.5
1.5
75
90
40
40
25
30
10
95
70
30
35
15
20
5
1
Min. Max.
-12 ns
1-800-379-4774
Unit
0.05
100
mA
mA
mA
mA
1.5
90
65
25
30
15
20
1
07/02/2010
Rev. O
Unit
mA
mA
mA
mA

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