2SC6017-TL-E ON Semiconductor, 2SC6017-TL-E Datasheet - Page 4

• Manufacturer Part Number: 2SC6017-TL-E
• Description: Transistors Bipolar - BJT BIP NPN 10A 50V
• Manufacturer: ON Semiconductor

Specifications of 2SC6017-TL-E

• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 100 V
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 6 V
• Collector-emitter Saturation Voltage: 180 mV
• Maximum Dc Collector Current: 13 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 200
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: TO-252
• Continuous Collector Current: 10 A
• Maximum Power Dissipation: 20 W
• Minimum Operating Temperature: - 55 C

--0.01
--0.01
--1.0
--0.1
--1.0
--1.0
--0.1
100
10
--0.01
--0.01
--0.01
--0.01
3
2
5
3
7
5
3
2
7
5
3
2
7
5
3
7
2
7
5
3
2
7
5
3
2
7
5
3
2
3
2
7
5
3
2
2SA2169
I C / I B =20
2
2
2
2
3
3
3
3
5 7
5 7
5 7
5 7
Collector Current, I C -- A
Collector Current, I C -- A
Collector Current, I C -- A
Collector Current, I C -- A
--0.1
--0.1
--0.1
--0.1
V CE (sat) -- I C
V CE (sat) -- I C
V BE (sat) -- I C
f T -- I C
2
2
2
2
3
3
3
3
5 7
5 7
5 7
5 7
--1.0
--1.0
--1.0
--1.0
2
2
2
2
2SA2169
V CE = --5V
2SA2169
I C / I B =50
2SA2169
I C / I B =50
2SA2169/2SC6017
3
3
3
3
IT08969
IT08971
IT08973
IT08975
5 7
5 7
5 7
5 7
--10
--10
--10
--10
0.01
0.01
100
0.1
1.0
0.1
1.0
10
0.01
0.01
0.01
0.01
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
7
5
3
2
7
5
3
2
3
2
7
5
3
2
2SC6017
I C / I B =50
2
2
2
2
3
3
3
3
5 7
5 7
5 7
5 7
Collector Current, I C -- A
Collector Current, I C -- A
Collector Current, I C -- A
Collector Current, I C -- A
0.1
0.1
0.1
V CE (sat) -- I C
0.1
V CE (sat) -- I C
V BE (sat) -- I C
f T -- I C
2
2
2
2
3
3
3
3
5 7
5 7
5 7
5 7
1.0
1.0
1.0
1.0
2
2
No. 8275-4/10
2
2
2SC6017
I C / I B =20
2SC6017
I C / I B =50
3
3
3
2SC6017
V CE =5V
3
IT08970
IT08972
IT08974
5 7
IT08976
5 7
5 7
5 7
10
10
10
10