TSB1590CX RF Taiwan Semiconductor, TSB1590CX RF Datasheet

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TSB1590CX RF

Manufacturer Part Number
TSB1590CX RF
Description
Transistors Bipolar - BJT PNP Transistor
Manufacturer
Taiwan Semiconductor
Datasheet

Specifications of TSB1590CX RF

Rohs
yes
Absolute Maximum Rating
Note: Single pulse, Pw≤350us, Duty≤2%
Electrical Specifications
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature
Operating Junction and Storage Temperature Range
Features
Structure
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Low V
Complementary part with TSD2444
Epitaxial Planar Type
PNP Silicon Transistor
CE(SAT)
-0.4 @ I
SOT-23
C
/ I
B
= -150mA / -15mA
(Ta = 25
(Ta = 25
Pin Definition:
1. Base
2. Emitter
3. Collector
o
C unless otherwise noted)
I
I
I
V
V
I
I
V
V
V
f=100MHz
V
C
C
E
C
C
CB
EB
CE
CE
CE
CB
o
= -50uA, I
= -50uA, I
= -1mA, I
/ I
/ I
C unless otherwise noted)
= -35V, I
= -6V, I
= -3V, I
= -3V, I
=-5V, I
= -10V, f=1MHz
B
B
= -500mA / -50mA
= -500mA / -50mA
Conditions
C
C
B
C
C
=-50mA,
C
E
E
= 0
= -100mA
= -800mA
= 0
= 0
= 0
= 0
1/1
PRODUCT SUMMARY
Ordering Information
TSB1590CX RF
Part No.
V
Symbol
BV
BV
CE(SAT)
V
V
V
T
I
P
Symbol
C
CBO
T
CEO
CBO
CEO
I
*V
*V
EBO
STG
C
BV
BV
BV
D
J
*h
*h
JA
Cob
I
I
CE(SAT)
BE(SAT)
CBO
EBO
f
FE
FE
Low Vcesat PNP Transistor
CBO
CEO
T
EBO
1
2
-40V
-25V
-1A
-0.18V @ I
Package
Min
120
-40
-25
SOT-23
80
-6
--
--
--
--
--
--
- 55 to +150
Limit
+150
225
556
-40
-25
-6
-1
-0.18
C
Typ
-0.9
150
15
/ I
--
--
--
--
--
--
--
B
TSB1590
= -500mA / -50mA
3Kpcs / 7” Reel
Packing
Max
-100
-100
-0.4
-1.3
560
--
--
--
--
--
--
Version: A09
o
Unit
mW
C/W
o
o
V
V
V
A
C
C
Unit
MHz
nA
nA
pF
V
V
V
V
V

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TSB1590CX RF Summary of contents

Page 1

... DC Current Transfer Ratio Transition Frequency Output Capacitance * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% PRODUCT SUMMARY Pin Definition: 1. Base BV 2. Emitter 3. Collector BV V Ordering Information Part No. TSB1590CX unless otherwise noted) Symbol o C unless otherwise noted) Conditions I = -50uA ...

Page 2

Electrical Characteristics Curve Figure 1. DC Current Gain Figure 3. V BE(SAT) Figure 5. Power Derating Curve o ( unless otherwise noted) v.s. Ic 2/2 TSB1590 Low Vcesat PNP Transistor Figure 2. V v.s. Ic CE(SAT) Figure ...

Page 3

SOT-23 Mechanical Drawing DIM 3/3 TSB1590 Low Vcesat PNP Transistor SOT-23 DIMENSION MILLIMETERS INCHES MIN MAX MIN 0.95 BSC 0.037 BSC 1.9 BSC 0.074 BSC 2.60 3.00 0.102 1.40 ...

Page 4

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No ...

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