TIP31F-S

Manufacturer Part NumberTIP31F-S
DescriptionTransistors Bipolar - BJT 160V 3A NPN
ManufacturerBourns
TIP31F-S datasheet
 


Specifications of TIP31F-S

Product CategoryTransistors Bipolar - BJTRohsyes
Factory Pack Quantity1000  
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Designed for Complementary Use with the
TIP32 Series
40 W at 25°C Case Temperature
3 A Continuous Collector Current
5 A Peak Collector Current
Customer-Specified Selections Available
This series is currently available, but
not recommended for new designs.
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Collector-base voltage (I
= 0)
E
Collector-emitter voltage (I
= 0)
B
Emitter-base voltage
Continuous collector current
P
e
a
k
o c
e l l
t c
r o
c
r u
e r
t n
s (
e
e
N
o
e t
) 1
Continuous base current
Continuous device dissipation at (or below) 25°C
C
o
t n
n i
u
o
u
s
d
e
i v
e c
i d
s s
p i
t a
o i
n
a
( t
r o
b
U
n
c
a l
m
p
e
d
n i
d
u
i t c
e v
o l
a
d
e
n
r e
y g
s (
e
e
O
p
r e
t a
n i
g
u j
n
t c
o i
n
e t
m
p
e
a r
u t
e r
a r
n
g
e
Storage temperature range
L
e
a
d
e t
m
p
e
a r
u t
e r
3
2 .
m
m
f
o r
m
c
a
s
e
f
NOTES: 1. This value applies for t
≤ 0.3 ms, duty cycle ≤ 10%.
p
2. Derate linearly to 150°C case temperature at the rate of 0.32 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, I
V
= 0, R
= 0.1 Ω, V
BE(off)
S
CC
JULY 1968 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
R
A
T
N I
G
c
a
s
e
e t
m
p
e
a r
u t
e r
s (
e
e
N
o
e t
e
o l
w
)
2
° 5
C
f
e r
e
a
r i
e t
m
p
e
a r
u t
e r
s (
e
e
N
o
N
o
e t
) 4
r o
1
0
s
e
c
o
n
s d
= 20 V.
NPN SILICON POWER TRANSISTORS
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
S
Y
M
B
O
L
TIP31
TIP31A
V
CBO
TIP31B
TIP31C
TIP31
TIP31A
V
CEO
TIP31B
TIP31C
V
EBO
I
C
I
CM
I
B
) 2
P
tot
e t
) 3
P
tot
½
I L
2
C
T
j
T
stg
T
L
= 0.4 A, R
B(on)
MDTRACA
V
A
L
U
E
U
N
T I
80
100
V
120
140
40
60
V
80
100
5
V
3
A
5
A
1
A
40
W
2
W
32
mJ
-65 to +150
°C
-65 to +150
°C
250
°C
= 100 Ω,
BE
1

TIP31F-S Summary of contents

  • Page 1

    ... NPN SILICON POWER TRANSISTORS TO-220 PACKAGE (TOP VIEW Pin electrical contact with the mounting base TIP31 TIP31A V CBO TIP31B TIP31C ...

  • Page 2

    ... TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature PARAMETER Collector-emitter (BR)CEO C breakdown voltage (see Note Collector-emitter V = 100 CES cut-off current V = 120 140 V CE Collector cut-off CEO current ...

  • Page 3

    ... Figure 1. 1·0 0·9 0·8 0·7 0·6 0· JULY 1968 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR-EMITTER SATURATION VOLTAGE TCS631AA 10 1·0 0· 100 ...

  • Page 4

    ... TIP31, TIP31A, TIP31B, TIP31C NPN SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS 100 10 1·0 0·1 0·01 4 MAXIMUM FORWARD-BIAS SAFE OPERATING AREA t = 300 µ 0 0 0 Operation TIP31 TIP31A TIP31B TIP31C 1·0 10 100 V - Collector-Emitter Voltage - V CE Figure 4 ...