SBC817-16LT3G ON Semiconductor, SBC817-16LT3G Datasheet

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SBC817-16LT3G

Manufacturer Part Number
SBC817-16LT3G
Description
Transistors Switching - Resistor Biased SS GP XSTR SPCL TR
Manufacturer
ON Semiconductor
Datasheet

Specifications of SBC817-16LT3G

Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Dc Collector/base Gain Hfe Min
100
Maximum Operating Frequency
100 MHz
Collector- Emitter Voltage Vceo Max
45 V
Continuous Collector Current
0.5 A
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SBC817-16LT3G
Manufacturer:
ON Semiconductor
Quantity:
7 900
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 12
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
(Note 1) T
Thermal Resistance,
Total Device Dissipation
Alumina Substrate, (Note 2)
Thermal Resistance,
Junction and Storage Temperature
Site and Control Change Requirements
Compliant
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Derate above 25°C
Junction−to−Ambient
T
Derate above 25°C
Junction−to−Ambient
A
A
Characteristic
= 25°C
= 25°C
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
500
225
556
300
417
5.0
1.8
2.4
45
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
mW
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
6x
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
1
1
= Device Code
= Date Code*
= Pb−Free Package
1
x = A, B, or C
CASE 318
STYLE 6
SOT−23
6x M G
COLLECTOR
2
Publication Order Number:
G
EMITTER
3
2
3
BC817−16LT1/D

Related parts for SBC817-16LT3G

SBC817-16LT3G Summary of contents

Page 1

... BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CES V (BR)EBO BC817−16, SBC817−16 BC817−25, SBC817−25 BC817−40, SBC817− Specific Marking Package SOT−23 6A (Pb−Free) SOT−23 6B (Pb− ...

Page 3

... TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L 300 150°C 200 25°C −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. Collector Current ...

Page 4

... TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 5. Saturation Region 100 500 100 1 Figure 6. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitances http://onsemi.com 4 for V ...

Page 5

... TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L 500 150°C 400 300 25°C 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 8. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 10. Base Emitter Saturation Voltage vs. Collector Current ...

Page 6

... TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 13. Saturation Region 100 500 100 1 Figure 14. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 15. Capacitances http://onsemi.com 6 for V CE(sat) ...

Page 7

... TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L 700 150°C 600 500 25°C 400 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 16. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 18. Base Emitter Saturation Voltage vs. ...

Page 8

... TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 21. Saturation Region 100 500 100 1 Figure 22. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 23. Capacitances http://onsemi.com 8 for V ...

Page 9

... TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, 1 0.1 0.01 Single Pulse Test @ T 0.001 0.01 SBC817−40L 1 ms 100 Thermal Limit = 25° (Vdc) CE Figure 24. Safe Operating Area http://onsemi.com 9 100 ...

Page 10

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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