BC817-40E6327 Infineon Technologies, BC817-40E6327 Datasheet - Page 6

• Manufacturer Part Number: BC817-40E6327
• Description: Transistors Bipolar - BJT NPN 45 V 500 mA
• Manufacturer: Infineon Technologies

Specifications of BC817-40E6327

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Gain Bandwidth Product Ft: 170 MHz
• Dc Collector/base Gain Hfe Min: 250
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Continuous Collector Current: 500 mA
• Maximum Power Dissipation: 330 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Base-emitter saturation voltage
I
Transition frequency f
V
Ι
C
f
C
CE
T
= ƒ (V
10
MHz
mA
10
10
10
10
10
10
10
5
5
5
= parameter in V, f = 2 GHz
5
5
-1
3
2
1
0
10
3
2
1
0
BC 817/818
BC 817/818
0
BEsat
), h
1.0
FE
10
150
-50
25 ˚C
1
= 10
˚C
˚C
T
2.0
= ƒ (I
10
C
2
)
3.0
mA
EHP00218
Ι
EHP00222
V
C
V
BEsat
10
4.0
3
6
Collector cutoff current I
V
Collector-base capacitance C
Emitter-base capacitance C
BC817K, BC818K
Ι
CBO
CBO
10
10
10
10
10
10
nA
pF
55
45
40
35
30
25
20
15
10
5
0
= 25 V
5
4
3
2
1
0
0
0
BC 817/818
CCB
CEB
2
4
6
50
BC817K.../BC818K...
8
max
10
CBO
12
typ
100
eb
14
= ƒ (T
cb
2011-09-19
= ƒ (V
= ƒ (V
16
˚C
EHP00221
T
A
VCB/VEB
A
EB
V
)
CB
)
150
20
)