BC817DPN T/R NXP Semiconductors, BC817DPN T/R Datasheet

no-image

BC817DPN T/R

Manufacturer Part Number
BC817DPN T/R
Description
Transistors Bipolar - BJT TRANS DOUBLE TAPE-7
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC817DPN T/R

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Dual
Transistor Polarity
NPN/PNP
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
5 V
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
160 at 100 mA at 1 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-457
Continuous Collector Current
0.5 A
Maximum Power Dissipation
600 mW
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
3000
Part # Aliases
BC817DPN,115
Product data sheet
Supersedes data of 2002 Aug 09
dbook, halfpage
DATA SHEET
BC817DPN
NPN/PNP general purpose
transistor
DISCRETE SEMICONDUCTORS
M3D302
2002 Nov 22

Related parts for BC817DPN T/R

BC817DPN T/R Summary of contents

Page 1

DATA SHEET dbook, halfpage BC817DPN NPN/PNP general purpose transistor Product data sheet Supersedes data of 2002 Aug 09 DISCRETE SEMICONDUCTORS M3D302 2002 Nov 22 ...

Page 2

... NXP Semiconductors NPN/PNP general purpose transistor FEATURES • High current (500 mA) • 600 mW total power dissipation • Replaces two SOT23 packaged transistors on same PCB area. APPLICATIONS • General purpose switching and amplification • Complementary driver • Half and full bridge driver. ...

Page 3

... NXP Semiconductors NPN/PNP general purpose transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to th j-a ambient Note 1. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER Per transistor unless otherwise specified; for the PNP transistor with negative polarity ...

Page 4

... NXP Semiconductors NPN/PNP general purpose transistor 500 handbook, halfpage h FE (1) 400 300 (2) 200 (3) 100 0 − TR1 (NPN 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.2 DC current gain as a function of collector current; typical values. 2002 Nov 22 ...

Page 5

... NXP Semiconductors NPN/PNP general purpose transistor 3 10 handbook, halfpage V CEsat (mV (1) (2) (3) 10 − TR1 (NPN 10 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.4 Collector-emitter saturation voltage as a function of collector current; typical values. 2002 Nov 22 ...

Page 6

... NXP Semiconductors NPN/PNP general purpose transistor 600 handbook, halfpage h FE (1) 500 400 300 (2) 200 (3) 100 0 −1 −10 −1 −10 = −1 V. TR2 (PNP 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.6 DC current gain as a function of collector current; typical values. ...

Page 7

... NXP Semiconductors NPN/PNP general purpose transistor −10 3 handbook, halfpage V CEsat (mV) −10 2 (1) (2) (3) −10 −1 −1 −10 −1 −10 TR2 (PNP 10 150 °C. (1) T amb = 25 °C. (2) T amb = −55 °C. (3) T amb Fig.8 Collector-emitter saturation voltage as a function of collector current; typical values. ...

Page 8

... NXP Semiconductors NPN/PNP general purpose transistor PACKAGE OUTLINE Plastic surface mounted package; 6 leads pin 1 index 1 e DIMENSIONS (mm are the original dimensions) UNIT 0.1 1.1 0.40 0.26 mm 0.013 0.25 0.9 0.10 OUTLINE VERSION IEC SOT457 2002 Nov scale ...

Page 9

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 10

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © ...

Related keywords