BC337-40 T/R NXP Semiconductors, BC337-40 T/R Datasheet - Page 9

• Manufacturer Part Number: BC337-40 T/R
• Description: Transistors Bipolar - BJT TRANS GP TAPE RADIAL
• Manufacturer: NXP Semiconductors

Specifications of BC337-40 T/R

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: NPN
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 100 MHz
• Dc Collector/base Gain Hfe Min: 250 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-54
• Dc Current Gain Hfe Max: 250 at 100 mA at 1 V
• Maximum Power Dissipation: 625 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 2000
• Part # Aliases: BC337-40,116

NXP Semiconductors
BC817_BC817W_BC337_6
Product data sheet
Fig 10. Selection -16: Collector current as a function
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C
1.2
0.8
0.4
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= 16.0 mA
= 14.4 mA
= 12.8 mA
= 11.2 mA
= 9.6 mA
= 8.0 mA
= 6.4 mA
= 4.8 mA
= 3.2 mA
= 1.6 mA
= 25 °C
1
2
(5)
3
(4)
(3)
4
006aaa140
V
(2)
CE
(10)
(V)
(1)
(6)
(7)
(8)
(9)
Rev. 06 — 17 November 2009
5
Fig 11. Selection -25: Collector current as a function
BC817; BC817W; BC337
(10) I
(A)
I
(1) I
(2) I
(3) I
(4) I
(5) I
(6) I
(7) I
(8) I
(9) I
C
45 V, 500 mA NPN general-purpose transistors
1.2
0.8
0.4
0
0
T
of collector-emitter voltage; typical values
B
B
B
B
B
B
B
B
B
B
amb
= 13.0 mA
= 11.7 mA
= 10.4 mA
= 9.1 mA
= 7.8 mA
= 6.5 mA
= 5.2 mA
= 3.9 mA
= 2.6 mA
= 1.3 mA
= 25 °C
1
2
(6)
(5)
3
(4)
(3)
© NXP B.V. 2009. All rights reserved.
4
006aaa141
V
(2)
CE
(10)
(V)
(1)
(7)
(8)
(9)
5
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