2N3583 LEADFREE Central Semiconductor, 2N3583 LEADFREE Datasheet

2N3583 LEADFREE

Manufacturer Part Number

2N3583 LEADFREE

Description

Transistors Bipolar - BJT NPN High Power

Manufacturer

Central Semiconductor

Datasheet

1.2N3583_LEADFREE.pdf (2 pages)

Specifications of 2N3583 LEADFREE

Product Category

Transistors Bipolar - BJT

Rohs

yes

Transistor Polarity

NPN

Collector- Base Voltage Vcbo

250 V

Collector- Emitter Voltage Vceo Max

175 V

Emitter- Base Voltage Vebo

6 V

Collector-emitter Saturation Voltage

175 V

Maximum Dc Collector Current

1 A

Gain Bandwidth Product Ft

10 MHz

Dc Collector/base Gain Hfe Min

Maximum Operating Temperature

+ 150 C

Mounting Style

Stud

Package / Case

TO-66

Continuous Collector Current

1 A

Maximum Power Dissipation

35 W

Minimum Operating Temperature

- 65 C

Factory Pack Quantity

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MAXIMUM RATINGS: (T C =25°C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Continuous Base Current

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T C =25°C unless otherwise noted)

SYMBOL

I CEV

I CEO

I EBO

BV CEO

V CE(SAT)

V BE(SAT)

V BE(ON)

h FE

f T

C ob

h fe

t r

t s

t f

I s/b

NPN SILICON TRANSISTOR

TEST CONDITIONS

V CE =225V, V EB =1.5V

V CE =340V, V EB =1.5V

V CE =450V, V EB =1.5V

V CE =225V, V EB =1.5V, T C =150°C

V CE =300V, V EB =1.5V, T C =150°C

V CE =150V

V BE =6.0V

I C =200mA

I C =1.0A, I B =125mA

I C =1.0A, I B =100mA

V CE =10V, I C =1.0A

V CE =10V, I C =100mA

V CE =10V, I C =500mA

V CE =2.0V, I C =1.0A

V CE =10V, I C =1.0A

V CE =10V, I C =200mA, f=5.0MHz

V CB =10V, I E =0, f=1.0MHz

V CE =30V, I C =100mA, f=1.0kHz

V CC =200V, I C =1.0A, I B1 =100mA, R L =200Ω

V CC =200V, I C =1.0A, I B1 =I B2 =100mA

V CE =100V

TO-66 CASE

2N3583

2N3584

2N3585

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N3583 Series

types are NPN Silicon Transistors designed for high

speed switching and high voltage amplifier applications.

MARKING: FULL PART NUMBER

SYMBOL

T J , T stg

V CBO

V CEO

V EBO

Θ JC

I CM

P D

I C

I B

MIN MAX

175

350

2N3583

200

120

350

1.0

3.0

5.0

1.4

2N3583

250

175

6.0

1.0

MIN MAX

250

350

8.0

2N3584

-65 to +200

2N3584

0.75

100

120

1.0

3.0

5.0

0.5

1.4

3.0

4.0

3.0

375

250

6.0

2.0

5.0

1.0

5.0

w w w. c e n t r a l s e m i . c o m

MIN MAX

300

350

8.0

2N3585

500

300

6.0

2.0

0.75

100

120

1.0

3.0

5.0

0.5

1.4

3.0

4.0

3.0

R2 (22-June 2011)

UNITS

°C/W

MHz

°C

μs

Related parts for 2N3583 LEADFREE

2N3583 LEADFREE Summary of contents

Page 1

... V CC =200V =1.0A =100mA I s =100V DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING: FULL PART NUMBER SYMBOL ...

Page 2

NPN SILICON TRANSISTOR TO-66 CASE - MECHANICAL OUTLINE MARKING: FULL PART NUMBER (22-June 2011) ...

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