BC857B-7 Diodes Inc., BC857B-7 Datasheet - Page 3

• Manufacturer Part Number: BC857B-7
• Description: Transistors Bipolar - BJT PNP BIPOLAR
• Manufacturer: Diodes Inc.

Specifications of BC857B-7

• Product Category: Transistors Bipolar - BJT
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Gain Bandwidth Product Ft: 200 MHz
• Dc Collector/base Gain Hfe Min: 220 at 2 mA at 5 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 300 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 3000

Thermal Characteristics and Derating Information
BC856A – BC858C
Document Number: DS112072 Rev. 22 - 2
0.4
0.3
0.2
0.1
0.0
0.1
10
10m
1
0
Pulse Power Dissipation
25
100m
Temperature (°C)
Derating Curve
50
Pulse Width (s)
1
75
Single Pulse. T
100
10
125
100
amb
=25°C
150
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400
350
300
250
200
150
100
50
100µ
0
Transient Thermal Impedance
D=0.5
D=0.2
1m
D=0.1
10m 100m
Pulse Width (s)
D=0.05
1
Single Pulse
BC856A-BC858C
10
100
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