BST52-70TA Diodes Inc. / Zetex, BST52-70TA Datasheet
BST52-70TA
Manufacturer Part Number
BST52-70TA
Description
Transistors Bipolar - BJT -
Manufacturer
Diodes Inc. / Zetex
Datasheet
1.BST52-70TA.pdf
(1 pages)
Specifications of BST52-70TA
Mounting Style
SMD/SMT
Package / Case
SOT-89
SOT89 NPN SILICON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – JANUARY 1996
FEATURES
*
*
PARTMAKING DETAIL — AS3
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
* Measured under pulsed conditions. Pulse width=300 s. Duty cycle
Spice parameter data is available upon request for this device
For typical characteristics graphs see FMMT614 datasheet.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Pea Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Emitter Cut-Off Current
Collector-Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
Turn On Time
Turn Off Time
Fast Switching
High h
FE
amb
=25°C
SYMBOL
V
V
V
I
I
V
V
h
t
t
EBO
CES
on
off
FE
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
BE(sat)
MIN.
90
80
10
1K
2K
3 - 80
amb
1.5K Typical
400 Typical
SYMBOL
V
I
V
V
I
I
P
T
CM
C
B
= 25°C unless otherwise stated).
tot
j
CBO
CEO
EBO
:T
MAX.
10
10
1.3
1.3
1.9
stg
UNIT
V
V
V
V
V
V
ns
ns
A
A
2%
-65 to +150
VALUE
500
100
1.5
90
80
10
1
CONDITIONS.
I
I
I
V
V
I
I
T
I
I
I
I
I
C
C
E
C
C
C
C
C
C
Bon
j
=10 A, I
EB
CE
=10 A, I
=10mA, I
=500mA, I
=500mA, I
=500mA, I
=150mA, V
=-500mA, V
=500mA
=150°C
=8V, I
=80V, I
=I
C
BST52
Boff
=0.5mA
SOT89
E
C
E
=0
B
=0
B
=0
C
=0*
=0
B
B
B
CE
=0.5mA
=0.5mA
=0.5mA
CE
=10V*
UNIT
C
=-10V*
mA
mA
W
°C
V
V
V
A
E
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