MMBZ9V1ALT3G ON Semiconductor, MMBZ9V1ALT3G Datasheet - Page 6

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MMBZ9V1ALT3G

Manufacturer Part Number
MMBZ9V1ALT3G
Description
TVS Diode Arrays 9.1V 225mW Dual Common Anode
Manufacturer
ON Semiconductor
Series
MMBZxxxALT1r
Datasheet

Specifications of MMBZ9V1ALT3G

Product Category
TVS Diode Arrays
Rohs
yes
Polarity
Unidirectional
Channels
2 Channels
Breakdown Voltage
8.65 V
Clamping Voltage
14 V
Operating Voltage
6 V
Peak Surge Current
1.7 A
Mounting Style
SMD/SMT
Termination Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Dimensions
1.3 mm W x 2.9 mm L
Package / Case
SOT-23-3
Peak Pulse Power Dissipation
24 W
Factory Pack Quantity
10000
package protects four separate lines using only one package.
This adds flexibility and creativity to PCB design especially
A quad junction common anode design in a SOT−23
MMBZ5V6ALT1G
MMBZ33VALT1G
THRU
KEYBOARD
TERMINAL
PRINTER
ETC.
I/O
ADDRESS BUS
TYPICAL COMMON ANODE APPLICATIONS
I/O
RAM
Computer Interface Protection
Microprocessor Protection
CONTROL BUS
http://onsemi.com
DATA BUS
MMBZ5V6ALT1G
MMBZ33VALT1G
THRU
6
ROM
when board space is at a premium. Two simplified examples
of TVS applications are illustrated below.
A
B
C
D
FUNCTIONAL
DECODER
CPU
CLOCK
GND
MMBZ5V6ALT1G
MMBZ33VALT1G
THRU
V
V
GND
DD
GG

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