M45PE10-VMN6P NUMONYX, M45PE10-VMN6P Datasheet

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M45PE10-VMN6P

Manufacturer Part Number
M45PE10-VMN6P
Description
IC FLASH 1MBIT 75MHZ 8SOIC
Manufacturer
NUMONYX
Series
Forté™r
Datasheet

Specifications of M45PE10-VMN6P

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
1M (128K x 8)
Speed
75MHz
Interface
SPI, 3-Wire Serial
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
8-SOIC (3.9mm Width)
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
SO
No. Of Pins
8
Base Number
45
Frequency
75MHz
Ic Generic Number
45PE10
Memory Configuration
128K X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M45PE10-VMN6P
Manufacturer:
ST
0
Part Number:
M45PE10-VMN6P
Manufacturer:
ST
Quantity:
20 000
Features
April 2008
SPI bus compatible serial interface
75 MHz clock rate (maximum)
2.7 V to 3.6 V single supply voltage
1-Mbit of page-erasable Flash memory
Page size: 256 bytes
– Page write in 11 ms (typical)
– Page program in 0.8 ms (typical)
– Page erase in 10 ms (typical)
Sector erase (512 Kbits)
Hardware write protection of the bottom sector
(64 Kbytes)
Electronic signature
– JEDEC standard two-byte signature
– Unique ID code (UID) with 16 bytes read-
Deep power-down mode 1 µA (typical)
More than 100 000 write cycles
More than 20 years data retention
Packages
– ECOPACK® (RoHS compliant)
(4011h)
only, available upon customer request only
in the T9HX process
with byte-alterability and 75 MHz SPI bus interface
1-Mbit, page-erasable serial flash memory
Rev 7
VFQPN8 (MP)
150 mil width
SO8N (MN)
(MLP8)
M45PE10
www.numonyx.com
1/47
1

Related parts for M45PE10-VMN6P

M45PE10-VMN6P Summary of contents

Page 1

... T9HX process Deep power-down mode 1 µA (typical) More than 100 000 write cycles More than 20 years data retention Packages – ECOPACK® (RoHS compliant) April 2008 1-Mbit, page-erasable serial flash memory Rev 7 M45PE10 SO8N (MN) 150 mil width VFQPN8 (MP) (MLP8) 1/47 www.numonyx.com 1 ...

Page 2

... Active power, standby power and deep power-down modes . . . . . . . . . . 13 4.7 Status register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.8 Protection modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6.1 Write enable (WREN 6.2 Write disable (WRDI 6.3 Read identification (RDID 6.4 Read status register (RDSR 6.4.1 2/47 WIP bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 M45PE10 ...

Page 3

... M45PE10 6.4.2 6.5 Read data bytes (READ 6.6 Read data bytes at higher speed (FAST_READ 6.7 Page write (PW 6.8 Page program (PP 6.9 Page erase (PE 6.10 Sector erase (SE 6.11 Deep power-down (DP 6.12 Release from deep power-down (RDP Power-up and power-down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 8 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 9 Maximum ratings ...

Page 4

... AC characteristics (75 MHz operation, T9HX (0.11 µm) process Table 16. SO8N – 8 lead plastic small outline, 150 mils body width, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43 Table 17. MLP8, 8-lead very thin dual flat package no lead, 6 × 5 mm, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 Table 18. Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45 Table 19. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 4/47 M45PE10 ...

Page 5

... M45PE10 List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 2. SO and VDFPN connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Figure 3. Bus master and memory devices on the SPI bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Figure 4. SPI modes supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Figure 5. Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Figure 6. Write enable (WREN) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 7. Write disable (WRDI) instruction sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Figure 8. Read identification (RDID) instruction sequence and data-out sequence . . . . . . . . . . . . . 20 Figure 9 ...

Page 6

... Description 1 Description The M45PE10 is a 1-Mbit (128 Kbit x 8 bit) serial paged flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 bytes at a time, using the page write or page program instruction. The page write instruction consists of an integrated page erase cycle followed by a page program cycle ...

Page 7

... M45PE10 Table 1. Signal names Signal name Reset Function Serial Clock Serial Data input Serial Data output Chip Select Write Protect Reset Supply voltage Ground Description Direction Input Input Output Input Input Input 7/47 ...

Page 8

... This input signal puts the device in the hardware protected mode, when write protect (W) is connected them from write, program and erase operations. When write protect (W) is connected the first 256 pages of memory behave like the other pages of memory. CC 8/47 , causing the first 256 pages of memory to become read-only by protecting M45PE10 ...

Page 9

... M45PE10 2.7 V supply voltage the supply voltage. CC 2.8 V ground the reference for the V SS supply voltage. CC Signal descriptions 9/47 ...

Page 10

... R SDO SDI SCK SPI memory R R device S W Reset Figure 3) ensures that no device is selected if the bus requirement is met. SHCH Figure 4, is the clock polarity when the SPI memory SPI memory R device device Reset W M45PE10 Reset AI12836c ...

Page 11

... M45PE10 The typical value 100 kΩ, assuming that the time constant R*C capacitance of the bus line) is short enough, as the S and C lines must reach the correct state (S = High and C = Low) while the SPI bus is in high impedance. Example pF, that is R*C p master never leaves the SPI bus in the high impedance state for a time period shorter than 5 µ ...

Page 12

... Table 14: AC characteristics (50 MHz operation, T9HX (0.11 µm) 12/47 Section 6.7: Page write operation), and Table 15: AC characteristics (75 MHz process)). M45PE10 (PW), ...

Page 13

... M45PE10 4.3 A fast way to modify data The Page Program (PP) instruction provides a fast way of modifying data (up to 256 contiguous bytes at a time), provided that it only involves resetting bits to 0 that had previously been set to ‘1’. This might be: when the designer is programming the device for the first time when the designer knows that the page has already been erased by an earlier page erase (PE) or sector erase (SE) instruction ...

Page 14

... The environments where non-volatile memory devices are used can be very noisy. No SPI device can operate correctly in the presence of excessive noise. To help combat this, the M45PE10 features the following data protection mechanisms: Power on reset and an internal timer (t changes while the power supply is outside the operating specification. ...

Page 15

... M45PE10 5 Memory organization The memory is organized as: 512 pages (256 bytes each) 131,072 bytes (8 bits each) 2 sectors (512 Kbits, 65536 bytes each) Each page can be individually: programmed (bits are programmed from erased (bits are erased from written (bits are changed to either The device is page or sector erasable (bits are erased from 0 to 1). ...

Page 16

... Memory organization Figure 5. Block diagram Reset W Control logic Address register and counter 16/47 High voltage generator I/O shift register 256-byte data buffer 10000h 00000h 256 bytes (page size) X decoder M45PE10 Status register 1FFFFh First 256 pages can be made read-only 000FFh AI07405 ...

Page 17

... M45PE10 6 Instructions All instructions, addresses and data are shifted in and out of the device, most significant bit first. Serial data input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select (S) is driven Low. Then, the one-byte instruction code must be shifted in to the device, most significant bit first, on serial data input (D), each bit being latched on the rising edges of Serial Clock (C) ...

Page 18

... Page program (PP) instruction completion Page erase (PE) instruction completion Sector erase (SE) instruction completion Figure 7. Write disable (WRDI) instruction sequence 18/47 (Figure 6) sets the write enable latch (WEL) bit Instruction High Impedance AI02281E (Figure 7) resets the write enable latch (WEL) bit Instruction High Impedance AI03750D M45PE10 ...

Page 19

... M45PE10 6.3 Read identification (RDID) The read identification (RDID) instruction allows to read the device identification data: Manufacturer identification (1 byte) Device identification (2 bytes) A unique ID code (UID) (17 bytes, of which 16 available upon customer request) The manufacturer identification is assigned by JEDEC, and has the value 20h for Numonyx. ...

Page 20

... Table 5. Status register format WEL and WIP are volatile read-only bits (WEL is set and reset by specific instructions; WIP is automatically set and reset by the internal logic of the device). 20/47 Important note on page Figure M45PE10 6). b0 (1) (1) 0 WEL WIP ...

Page 21

... M45PE10 Figure 9. Read status register (RDSR) instruction sequence and data-out sequence High Impedance Q 6.5 Read data bytes (READ) The device is first selected by driving Chip Select (S) Low. The instruction code for the read data bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising edge of Serial Clock (C) ...

Page 22

... Instructions Figure 10. Read data bytes (READ) instruction sequence and data-out sequence High Impedance Q 1. Address bits A23 to A17 are don’t care. 22/ Instruction 24-bit address MSB Data out MSB M45PE10 Data out 2 7 AI03748D ...

Page 23

... M45PE10 6.6 Read data bytes at higher speed (FAST_READ) The device is first selected by driving Chip Select (S) Low. The instruction code for the read data bytes at higher speed (FAST_READ) instruction is followed by a 3-byte address (A23- A0) and a dummy byte, each bit being latched-in during the rising edge of Serial Clock (C). ...

Page 24

... A page write (PW) instruction applied to a page that is hardware protected is not executed. Any page write (PW) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. 24/47 Figure 12. AC characteristics (50 MHz M45PE10 process)). ...

Page 25

... M45PE10 Figure 12. Page write (PW) instruction sequence MSB 1. Address bits A23 to A17 are don’t care ≤ n ≤ 256 Instruction 24-bit address MSB Data byte 2 Data byte MSB Data byte MSB Data byte MSB Instructions AI04045 25/47 ...

Page 26

... A page program (PP) instruction applied to a page that is hardware protected is not executed. Any page program (PP) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. 26/47 Figure 13. and Table 15: AC characteristics (75 MHz operation, M45PE10 Table 14: AC ...

Page 27

... M45PE10 Figure 13. Page program (PP) instruction sequence MSB 1. Address bits A23 to A17 are don’t care ≤ n ≤ 256 Instruction 24-bit address MSB Data byte 2 Data byte MSB Data byte MSB Data byte MSB Instructions AI04044 27/47 ...

Page 28

... Any page erase (PE) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 14. Page erase (PE) instruction sequence Address bits A23 to A17 are don’t care. 28/47 Figure 14 Instruction 24-bit address 23 22 MSB M45PE10 ) is initiated AI04046 ...

Page 29

... M45PE10 6.10 Sector erase (SE) The sector erase (SE) instruction sets to ‘1’ (FFh) all bits inside the chosen sector. Before it can be accepted, a write enable (WREN) instruction must previously have been executed. After the write enable (WREN) instruction has been decoded, the device sets the write enable latch (WEL) ...

Page 30

... Any deep power-down (DP) instruction, while an erase, program or write cycle is in progress, is rejected without having any effects on the cycle that is in progress. Figure 16. Deep power-down (DP) instruction sequence 30/47 Figure 16 Instruction M45PE10 specified CC1 CC2 before the supply current is reduced Standby mode Deep power-down mode AI03753D ...

Page 31

... M45PE10 6.12 Release from deep power-down (RDP) Once the device has entered the deep power-down mode, all instructions are ignored except the release from deep power-down (RDP) instruction. Executing this instruction takes the device out of the deep power-down mode. The release from deep power-down (RDP) instruction is entered by driving Chip Select (S) Low, followed by the instruction code on Serial Data input (D) ...

Page 32

... CC , all operations are disabled and the device does not respond to WI VSL modes. is less than the CC PUW threshold. However, the correct operation of is still below V (min). No write, program or CC (min) level (min), the device can be CC M45PE10 has elapsed supply. CC ...

Page 33

... M45PE10 Figure 18. Power-up timing (max (min) Reset state of the device V WI Table 6. Power-up timing and V Symbol ( (min low VSL CC (1) t Time delay before the first write, program or erase instruction PUW (1) V Write inhibit voltage WI 1. These parameters are characterized only, over the temperature range –40 °C to +85 °C. ...

Page 34

... Compliant with JEDEC Std J-STD-020C (for small body, Sn- assembly), the Numonyx ® ECOPACK 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU. 2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω). 34/47 Table 7: Absolute maximum ratings Parameter (2) M45PE10 may Min. Max. Unit –65 150 °C (1) See note ° ...

Page 35

... M45PE10 10 DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristic tables that follow are derived from tests performed under the measurement conditions summarized in the relevant tables. Designers should check that the operating conditions in their circuit match the measurement conditions when relying on the quoted parameters ...

Page 36

... Input high voltage IH V Output low voltage OL V Output high voltage OH 36/47 Test condition (in addition to those in Table 0.1V / 0.9 MHz open C = 0.1V / 0.9 MHz open 1 –100 µA OH M45PE10 Min. Max. Unit ± 2 µA ± 2 µA 50 µA 10 µ – 0.5 0. 0. –0 ...

Page 37

... M45PE10 Table 12. AC characteristics (25 MHz operation) Symbol Alt ( CLH ( CLL t t SLCH CSS t CHSL t t DVCH DSU t t CHDX DH t CHSH t SHCH t t SHSL CSH ( SHQZ DIS t t CLQV CLQX HO ( RLRH RST t t RHSL REC t SHRH t WHSL t SHWL ( (2) t RDP ( ( must be greater than or equal ...

Page 38

... Page program cycle time (256 bytes) Page program cycle time (n bytes) Page erase cycle time Sector erase cycle time . C (1) Table 8 and Table 9 Min. Typ. Max. D. 200 100 10.2+ n*0.8/256 1.2 5 0.4+ n*0.8/256 M45PE10 Unit MHz MHz µs µ ...

Page 39

... M45PE10 Table 14. AC characteristics (50 MHz operation) Test conditions specified in Symbol Alt. Clock frequency for the following instructions FAST_READ, PW, PP, PE, SE, DP, RDP WREN, WRDI, RDSR, RDID f Clock frequency for read instructions R ( Clock High time CH CLH ( Clock Low time CL CLL Clock slew rate ...

Page 40

... A. For instance, int(12/ int(32/ int(15.3) =16. 40/47 Table 8 Parameter (3) (peak to peak (1) (2) ) and Table 9 Min. Typ. Max. D. 100 100 0.8 3 (7) int(n/8) × 0.025 150 4.5 10 Section 12: Ordering M45PE10 Unit MHz MHz µs µ ...

Page 41

... M45PE10 Figure 20. Serial input timing S tCHSL C tDVCH D High Impedance Q Figure 21. Write Protect setup and hold timing W tWHSL High Impedance Q tSLCH tCHSH tCHDX tCLCH MSB IN DC and AC parameters tSHSL tSHCH tCHCL LSB IN AI01447C tSHWL AI07439 41/47 ...

Page 42

... DC and AC parameters Figure 22. Output timing S C tCLQV tCLQX tCLQX Q ADDR.LSB IN D Figure 23. Reset AC waveforms S Reset 42/47 tCH tCLQV tQLQH tQHQL tSHRH tRHSL tRLRH M45PE10 tCL tSHQZ LSB OUT AI01449e AI06808 ...

Page 43

... M45PE10 11 Package mechanical In order to meet environmental requirements, Numonyx offers these devices in ECOPACK® packages. ECOPACK® packages are lead-free. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. Figure 24. SO8N – ...

Page 44

... ddd C inches Typ Min 0.033 0.031 0.000 0.026 0.008 0.016 0.014 0.236 0.226 0.134 0.126 0.197 0.187 0.157 0.150 0.050 – 0.004 0.000 0.024 0.020 M45PE10 70-ME Max 0.039 0.002 0.019 0.142 0.169 – 0.029 12° 0.006 0.004 0.002 ...

Page 45

... ECOPACK® (RoHS compliant) For a list of available options (speed, package, etc.), for further information on any aspect of this device or when ordering parts operating at 75 MHz (0.11 µm technology, process digit ‘4’), please contact your nearest Numonyx sales office. Ordering information M45PE10 – ...

Page 46

... Table 11: DC CC3 scheme. Added (Table 14 VSS ground descriptions added. modified and explanatory text added. ratings. Figure 22: Output timing. Plating technology in Table 18: Ordering Section 11: Package Section 11: Package Figure 3: Bus master and bus, and Section 6.3: Read identification M45PE10 added). mechanical). mechanical. ...

Page 47

... M45PE10 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH NUMONYX™ PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN NUMONYX'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, NUMONYX ASSUMES NO LIABILITY WHATSOEVER, AND NUMONYX DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT ...

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