M25PE40-VMP6TG NUMONYX, M25PE40-VMP6TG Datasheet - Page 51

• Manufacturer Part Number: M25PE40-VMP6TG
• Description: IC FLASH 4MBIT 75MHZ 8VFQFPN
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE40-VMP6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 4M (512K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFQFN, 8-VFQFPN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE40-VMP6TG; M25PE40-VMP6TGTR

M25PE40
Table 22.
1. See
2. Details of how to find the technology process in the marking are given in AN1995, see also
3. Delivery of parts operating with a maximum clock rate of 75 MHz starts from week 8 of 2008.
4. Preliminary data.
5. t
6. Value guaranteed by characterization, not 100% tested in production.
7. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
t
t
RDP
t
information.
t
CHDX
CHSH
SHCH
PW
CH
SLCH
CHSL
DVCH
CLQV
CLQX
t
CH
CL
SHSL
DP
PP
t
t
SSE
t
t
f
f
PE
SE
BE
W
C
R
(5)
(8)
(5)
(6)
(8)
+ t
(6)
Important note on page
(6)
(7)
(7)
CL
must be greater than or equal to 1/ f
AC characteristics (75 MHz operation, T9HX (0.11µm) process
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
CLL
DIS
f
DH
HO
t
C
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Slew Rate (peak to peak)
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
Write Protect Setup time
Write Protect Hold time
S to Deep Power-down
S High to Standby mode
Write Status Register cycle time
Page Write cycle time (256 bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
Subsector Erase cycle time
Bulk Erase cycle time
6.
Test conditions specified in
Parameter
C
.
Table 14
and
Min.
D.C.
D.C.
100
100
0.1
Table 15
20
6
6
5
5
2
5
5
5
0
Section 13: Ordering
int(n/8) ×
0.025
Typ.
(1)
0.8
1.5
11
10
80
DC and AC parameters
3
8
)
(2)(3)(4)
(9)
Max.
150
8/6
75
33
30
15
23
20
10
5
8
3
3
Unit
MHz
MHz
V/ns
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
51/62
s
s