M25PE10-VMN6P NUMONYX, M25PE10-VMN6P Datasheet - Page 53

• Manufacturer Part Number: M25PE10-VMN6P
• Description: IC FLASH 1MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE10-VMN6P

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 1M (128K x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

M25PE20, M25PE10
Table 23.
1. See
2. Details of how to find the technology process in the marking are given in AN1995, see also
3. t
4. Value guaranteed by characterization, not 100% tested in production.
5. Only applicable as a constraint for a WRSR instruction when SRWD is set to ‘1’.
6. When using PP and PW instructions to update consecutive bytes, optimized timings are obtained with one sequence
7.
Symbol
t
t
t
WHSL
SHWL
SHQZ
t
t
t
t
t
t
t
t
t
t
t
RDP
t
t
t
t
DVCH
CHDX
CHSH
SHCH
PW
CH
SLCH
CHSL
SHSL
CLQV
CLQX
DP
t
CL
PP
information.
including all the bytes versus several sequences of only a few bytes (1 ≤ n ≤ 256).
t
t
t
SSE
int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
t
CH
f
f
PE
SE
BE
W
C
R
(3)
(4)
(6)
(3)
(6)
(4)
+ t
(4)
(5)
(5)
Important note on page
CL
must be greater than or equal to 1/ f
t
t
t
t
t
Alt.
t
DSU
t
CSH
t
CLH
CSS
CLL
DIS
HO
f
DH
t
AC characteristics (50 MHz operation,
C
V
Clock frequency for the following instructions:
FAST_READ, RDLR, PW, PP, WRLR, PE, SE,
SSE, DP, RDP, WREN, WRDI, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Slew Rate
S Active Setup time (relative to C)
S Not Active Hold time (relative to C)
Data In Setup time
Data In Hold time
S Active Hold time (relative to C)
S Not Active Setup time (relative to C)
S Deselect time
Output Disable time
Clock Low to Output Valid
Output Hold time
Write Protect Setup time
Write Protect Hold time
S to Deep Power-down
S High to Standby mode
Write Status Register cycle time
Page Write cycle time (256 bytes)
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Erase cycle time
Sector Erase cycle time
SubSector Erase cycle time
Bulk Erase cycle time
6.
Test conditions specified in
2
Parameter
(peak to peak)
C
.
T9HX (0.11 µm) process
Table 16
Min.
D.C.
D.C.
100
100
0.1
50
9
9
5
5
2
5
5
5
0
and
Table 17
int(n/8) × 0.025
Section 13: Ordering
Typ.
(1)
0.8
1.5
4.5
11
10
80
3
)
DC and AC parameters
(2)
(7)
Max.
150
50
33
30
15
23
20
10
8
8
3
3
5
MHz
MHz
V/ns
Unit
53/64
ms
ms
ms
ms
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
ns
s
s