M29W800DB70N6F NUMONYX, M29W800DB70N6F Datasheet - Page 42

• Manufacturer Part Number: M29W800DB70N6F
• Description: IC FLASH 8MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W800DB70N6F

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

42/52
Table 23.
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 24.
1. Not supported in the CFI.
x 16
x 16
1Ah
1Bh
1Ch
1Dh
1Eh
10h
12h
13h
14h
15h
16h
17h
18h
19h
1Fh
20h
21h
22h
23h
24h
25h
26h
11h
Address
Address
3Ch
4Ch
2Ah
2Ch
2Eh
36h
38h
3Ah
3Eh
40h
42h
44h
46h
48h
4Ah
20h
22h
24h
26h
28h
30h
32h
34h
x 8
x 8
CFI query identification string
CFI query system interface information
000Ah
0004h
0000h
0000h
0004h
0003h
0000h
0027h
0036h
0000h
0000h
0000h
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
Data
Data
V
V
V
V
Typical timeout per single byte/word program = 2
Typical timeout for minimum size write buffer program = 2
Typical timeout per individual block erase = 2
Typical timeout for full chip erase = 2
Maximum timeout for byte/word program = 2
Maximum timeout for write buffer program = 2
Maximum timeout per individual block erase = 2
Maximum timeout for chip erase = 2
Query unique ASCII string ‘QRY’
Primary algorithm command set and control interface ID
code 16-bit ID code defining a specific algorithm
Address for primary algorithm extended query table (see
Table
Alternate vendor command set and control interface ID
code second vendor - specified algorithm supported
Address for alternate algorithm extended query table
CC
CC
PP
PP
[programming] supply minimum program/erase voltage
[programming] supply maximum program/erase voltage
logic supply minimum program/erase voltage
logic supply maximum program/erase voltage
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
26)
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
(1)
Description
Description
n
n
times typical
ms
(1)
n
n
n
times typical
ms
times typical
n
n
times typical
μs
(1)
n
μs
compatible
P = 40h
Value
AMD
NA
NA
‘Q’
‘R’
‘Y’
256 μs
Value
16 μs
2.7 V
3.6 V
NA
NA
NA
NA
8 s
1 s