M25P16-VMN3TPB NUMONYX, M25P16-VMN3TPB Datasheet - Page 33

• Manufacturer Part Number: M25P16-VMN3TPB
• Description: IC SRL FLSH 16MBIT 3V 75MHZ S08N
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P16-VMN3TPB

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 16M (2M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) instruction
1. The value of the 8-bit electronic signature, for the M25P16, is 14h.
Figure 20. Release from Deep Power-down (RES) instruction sequence
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before
the whole of the 8-bit electronic signature has been transmitted for the first time (as shown in
still ensures that the device is put into Standby Power mode. If the device was not previously in the Deep
Power-down mode, the transition to the Standby Power mode is immediate. If the device was previously
in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by t
and Chip Select (S) must remain High for at least t
device waits to be selected, so that it can receive, decode and execute instructions.
S
C
D
Q
S
C
D
Q
0
sequence and data-out sequence
1
High Impedance
2
Instruction
3
High Impedance
0
4
1
5
2
6
Instruction
3
7
MSB
23
4
8
22 21
5
9 10
3 Dummy bytes
6
7
3
28 29 30 31 32 33 34 35
2
RES1
1
Deep Power-down mode
0
(max). Once in the Standby Power mode, the
MSB
7
t
RES1
Electronic Signature Out
Deep Power-down mode
6
5
4
3
36 37 38
2
Standby mode
1
0
t
RES2
Standby mode
Figure
AI04078B
RES1
AI04047C
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20),
,