M29W800DB45ZE6E NUMONYX, M29W800DB45ZE6E Datasheet - Page 32

• Manufacturer Part Number: M29W800DB45ZE6E
• Description: IC FLASH 8MBIT 45NS 48TFBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W800DB45ZE6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 8M (1M x 8 or 512K x 16)
• Speed: 45ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 13. Write AC waveforms, chip enable controlled
Table 14.
1. Sampled only, not 100% tested.
32/52
Symbol
t
t
EHRL
t
VCHWL
t
t
t
t
t
t
t
t
t
EHWH
t
WLEL
DVEH
EHDX
GHEL
EHGL
ELEH
EHEL
AVAV
AVEL
ELAX
A0-A18/
A–1
W
G
E
DQ0-DQ7/
DQ8-DQ15
V CC
RB
(1)
Write AC characteristics, chip enable controlled
t
t
t
t
BUSY
t
t
t
t
OEH
Alt
t
t
CPH
t
t
VCS
WC
WS
WH
CP
DS
DH
AS
AH
Address Valid to Next Address Valid
Write Enable Low to Chip Enable Low
Chip Enable Low to Chip Enable High
Input Valid to Chip Enable High
Chip Enable High to Input Transition
Chip Enable High to Write Enable High
Chip Enable High to Chip Enable Low
Address Valid to Chip Enable Low
Chip Enable Low to Address Transition
Output Enable High Chip Enable Low
Chip Enable High to Output Enable Low
Program/Erase Valid to RB Low
V
tVCHWL
CC
High to Write Enable Low
tWLEL
tGHEL
tAVEL
Parameter
tAVAV
VALID
tELEH
tDVEH
tEHRL
VALID
tELAX
Max
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
tEHWH
tEHGL
45 ns
45
30
25
30
40
50
30
0
0
0
0
0
0
tEHEL
tEHDX
M29W800D
70 ns
70
45
45
30
45
30
50
0
0
0
0
0
0
90 ns
AI05450
90
50
50
30
50
35
50
0
0
0
0
0
0
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs