CAT93C46YI-GT3 ON Semiconductor, CAT93C46YI-GT3 Datasheet - Page 4

• Manufacturer Part Number: CAT93C46YI-GT3
• Description: IC EEPROM 1KBIT 2MHZ 8TSSOP
• Manufacturer: ON Semiconductor

Specifications of CAT93C46YI-GT3

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 1K (128 x 8 or 64 x 16)
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Device Operation
intended for use with industry standard microprocessors.
The CAT93C46 can be organized as either registers of 16
bits or 8 bits. When organized as X16, seven 9−bit
instructions control the reading, writing and erase
operations of the device. When organized as X8, seven
10−bit instructions control the reading, writing and erase
operations of the device. The CAT93C46 operates on a
single power supply and will generate on chip the high
voltage required during any write operation.
DI pin on the rising edge of the clock (SK). The DO pin is
normally in a high impedance state except when reading data
from the device, or when checking the ready/busy status
during a write operation. The serial communication protocol
follows the timing shown in Figure 2.
internal write cycle by selecting the device (CS high) and
polling the DO pin; DO low indicates that the write
operation is not completed, while DO high indicates that the
device is ready for the next instruction. If necessary, the DO
pin may be placed back into a high impedance state during
chip select by shifting a dummy “1” into the DI pin. The DO
pin will enter the high impedance state on the rising edge of
the clock (SK). Placing the DO pin into the high impedance
state is recommended in applications where the DI pin and
the DO pin are to be tied together to form a common DI/O
Table 8. INSTRUCTION SET
The CAT93C46 is a 1024−bit nonvolatile memory
Instructions, addresses, and write data are clocked into the
The ready/busy status can be determined after the start of
Instruction
ERASE
WRITE
EWEN
EWDS
WRAL
READ
ERAL
Start Bit
1
1
1
1
1
1
1
Opcode
10
01
00
00
00
00
11
11XXXXX
00XXXXX
10XXXXX
01XXXXX
A6−A0
A6−A0
A6−A0
x8
Address
http://onsemi.com
00XXXX
10XXXX
01XXXX
11XXXX
A5−A0
A5−A0
A5−A0
x16
4
pin. The Ready/Busy flag can be disabled only in Ready
state; no change is allowed in Busy state.
logical “1” start bit, a 2−bit (or 4−bit) opcode, 6−bit address
(an additional bit when organized X8) and for write
operations a 16−bit data field (8−bit for X8 organization).
Read
address (clocked into the DI pin), the DO pin of the
CAT93C46 will come out of the high impedance state and,
after sending an initial dummy zero bit, will begin shifting
out the data addressed (MSB first). The output data bits will
toggle on the rising edge of the SK clock and are stable after
the specified time delay (t
Erase/Write Enable and Disable
writing after power−up or after an EWDS (write disable)
instruction must first be preceded by the EWEN (write
enable) instruction. Once the write instruction is enabled, it
will remain enabled until power to the device is removed, or
the EWDS instruction is sent. The EWDS instruction can be
used to disable all CAT93C46 write and erase instructions,
and will prevent any accidental writing or clearing of the
device. Data can be read normally from the device
regardless of the write enable/disable status. The EWEN and
EWDS instructions timing is shown in Figure 4.
The format for all instructions sent to the device is a
Upon receiving a READ command (Figure 3) and an
The CAT93C46 powers up in the write disable state. Any
D7−D0
D7−D0
x8
Data
D15−D0
D15−D0
x16
PD0
Read Address AN–A0
Clear Address AN–A0
Write Address AN–A0
Write Enable
Write Disable
Clear All Addresses
Write All Addresses
or t
PD1
Comments
).