CAT93C56YI-GT3 ON Semiconductor, CAT93C56YI-GT3 Datasheet - Page 2

• Manufacturer Part Number: CAT93C56YI-GT3
• Description: IC EEPROM 2KBIT 2MHZ 8TSSOP
• Manufacturer: ON Semiconductor

Specifications of CAT93C56YI-GT3

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 2K (256 x 8 or 128 x 16)
• Speed: 2MHz
• Interface: Microwire, 3-Wire Serial
• Voltage - Supply: 1.8 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 93C56YI-GT3

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than V
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
3. Block Mode, V
Table 2. RELIABILITY CHARACTERISTICS
Table 3. D.C. OPERATING CHARACTERISTICS, CAT93C56, Die Rev. G – New Product
(V
Table 1. ABSOLUTE MAXIMUM RATINGS
Storage Temperature
Voltage on Any Pin with Respect to Ground (Note 1)
Symbol
N
undershoot to no less than −1.5 V or overshoot to no more than V
and JEDEC test methods.
CC
V
V
END
V
V
I
I
I
I
V
V
V
V
CC1
CC2
I
SB1
SB2
I
OH1
OH2
Symbol
LO
OL1
OL2
IH1
IH2
LI
IL1
IL2
= +1.8 V to +5.5 V, T
T
(Note 3)
DR
Power Supply
Current (Write)
Power Supply
Current (Read)
Power Supply
Current (Standby)
(x8 Mode)
Power Supply
Current (Standby)
(x16 Mode)
Input Leakage
Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Output Low Voltage
Output High Voltage
CC
Parameter
= 5 V, 25°C
Endurance
Data Retention
A
=−40°C to +125°C unless otherwise specified.)
Parameters
GND ORG = Float or V
f
f
V
SK
SK
CS = GND ORG = GND
IN
V
4.5 V v V
4.5 V v V
1.8 V v V
1.8 V v V
Parameter
4.5 V v V
4.5 V v V
1.8 V v V
1.8 V v V
V
OUT
V
= 1 MHz, V
= 1 MHz, V
IN
= GND or V
IN
I
I
OH
OH
I
= GND or V
OL
I
CS = GND
= GND to V
= GND to V
OL
= −400 mA
= −100 mA
= 2.1 mA
= 1 mA
(Note 2)
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
< 5.5 V,
< 5.5 V,
< 4.5 V,
< 4.5 V,
< 5.5 V
< 5.5 V
< 4.5 V
< 4.5 V
CC
http://onsemi.com
Test Conditions
= 5.0 V
= 5.0 V
CC
, CS =
CC
CC
,
,
CC
CC
2
+ 1.5 V, for periods of less than 20 ns.
T
T
T
T
T
T
T
T
A
A
A
A
A
A
A
A
= −40°C to +125°C
= −40°C to +125°C
= −40°C to +125°C
= −40°C to +125°C
= −40°C to +85°C
= −40°C to +85°C
= −40°C to +85°C
= −40°C to +85°C
−65 to +150
−0.5 to +6.5
CC
1,000,000
Ratings
+ 0.5 V. During transitions, the voltage on any pin may
Min
100
V
V
CC
CC
−0.1
Min
2.4
2
0
− 0.2
x 0.7
Program / Erase Cycles
Years
Units
Units
V
V
V
°C
CC
V
CC
CC
Max
500
0.8
0.4
0.2
1
2
4
1
2
1
2
1
2
x 0.2
+ 1
+ 1
Units
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V