SST38VF6401-90-5C-EKE Microchip Technology, SST38VF6401-90-5C-EKE Datasheet - Page 27

• Manufacturer Part Number: SST38VF6401-90-5C-EKE
• Description: IC FLASH MPF 64MBIT 90NS 48TSOP
• Manufacturer: Microchip Technology

Specifications of SST38VF6401-90-5C-EKE

• Memory Size: 64M (4M x 16)
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSOP
• Format - Memory: FLASH
• Memory Type: FLASH
• Speed: 90ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Architecture: Uniform / Boot Sector
• Timing Type: Asynchronous
• Access Time: 90 ns
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

64 Mbit (x16) Advanced Multi-Purpose Flash Plus
SST38VF6401 / SST38VF6402 / SST38VF6403 / SST38VF6404
DC Characteristics
TABLE 18: DC Operating Characteristics V
TABLE 19: Capacitance
TABLE 20: Reliability Characteristics
©2009 Silicon Storage Technology, Inc.
Symbol
I
I
I
I
I
I
V
V
V
V
V
V
Parameter
C
C
Symbol
N
T
I
DD
SB
ALP
LI
LIW
LO
LTH
DR
IL
ILC
IH
IHC
OL
OH
I/O
IN
END
1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C
2. See Figure 27
3. The I
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
2. N
1
1
1
1
(room temperature), and V
1,2
END
DD
endurance rating is qualified as 100,000 cycles minimum per block.
Parameter
Power Supply Current
Standby V
Auto Low Power
Input Leakage Current
Input Leakage Current
on WP# pin and RST#
Output Leakage Current
Input Low Voltage
Input Low Voltage (CMOS)
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
current listed is typically less than 2mA/MHz, with OE# at V
Read
Intra-Page Read @5 MHz
Intra-Page Read @40 MHz
Program and Erase
Program-Write-Buffer-to-
Flash
Description
I/O Pin Capacitance
Input Capacitance
Parameter
Endurance
Data Retention
Latch Up
3
DD
Current
DD
(T
A
= 3V. Not 100% tested.
= 25°C, f=1 Mhz, other pins open)
V
V
0.7V
DD
DD
Min
-0.3
-0.2
DD
DD
Minimum Specification
= 2.7-3.6V
Limits
27
100 + I
Max
100,000
2.5
0.8
0.3
0.2
18
20
35
50
30
20
10
10
1
100
IH.
1
Typical V
DD
Units
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
DD
V
V
V
V
V
V
is 3V.
Test Conditions
Address input=V
CE#=V
CE#=V
CE#=V
CE#=WE#=V
CE#=WE#=V
CE#=V
CE#=V
All inputs=V
V
WP#=GND to V
V
V
V
V
V
I
I
OL
OH
Cycles
IN
OUT
DD
DD
DD
DD
Test Condition
Units
Years
=100 µA, V
=GND to V
=-100 µA, V
mA
=V
=V
=V
=V
=GND to V
V
V
I/O
DD
DD
DD
DD
IN
IL
IL
IL
IHC
ILC
, OE#=WE#=V
, OE#=WE#=V
, OE#=WE#=V
= 0V
= 0V
, V
Min
Max
Max
Max
, V
SS
DD
DD
IL
IL
DD
DD
JEDEC Standard A103
JEDEC Standard A117
, OE#=V
, OE#=V
or V
=V
DD
=V
JEDEC Standard 78
DD
DD
, V
ILT
=V
=V
DD
DD
, V
/V
DD,
or RST#=GND to V
DD
DD
Test Method
DD
IHT
Max
Max
DD
=V
WE#=V
Min
S71309-05-000
IH
IH
IH
IH
IH
=V
Min
2
DD
, V
Maximum
at f= 5 MHz
DD
DD
Max
12 pF
6 pF
Data Sheet
Max
=V
IHC
DD
T18.0 1309
T19.0 1309
T20.0 1309
Max
07/09
DD