DS1245Y-100 Maxim Integrated Products, DS1245Y-100 Datasheet

IC NVSRAM 1MBIT 100NS 32DIP

DS1245Y-100

Manufacturer Part Number
DS1245Y-100
Description
IC NVSRAM 1MBIT 100NS 32DIP
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS1245Y-100

Format - Memory
RAM
Memory Type
NVSRAM (Non-Volatile SRAM)
Memory Size
1M (128K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
32-DIP Module (600 mil), 32-EDIP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
DS1245Y100

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DS1245Y-100
Manufacturer:
DALLAS
Quantity:
4 130
Part Number:
DS1245Y-100
Manufacturer:
DALLAS
Quantity:
4 130
Part Number:
DS1245Y-100
Manufacturer:
DALLAS
Quantity:
5 638
Part Number:
DS1245Y-100+
Manufacturer:
DALLAS
Quantity:
117
FEATURES
 10 years minimum data retention in the
 Data is automatically protected during power
 Replaces 128k x 8 volatile static RAM,
 Unlimited write cycles
 Low-power CMOS
 Read and write access times of 70 ns
 Lithium energy source is electrically
 Full ±10% V
 Optional ±5% V
 Optional industrial temperature range of
 JEDEC standard 32-pin DIP package
 PowerCap Module (PCM) package
19-5638; Rev 11/10
www.maxim-ic.com
absence of external power
loss
EEPROM or Flash memory
disconnected to retain freshness until power is
applied for the first time
(DS1245AB)
-40°C to +85°C, designated IND
-
-
-
-
Directly surface-mountable module
Replaceable snap-on PowerCap provides
lithium backup battery
Standardized pinout for all nonvolatile
SRAM products
Detachment feature on PowerCap allows
easy removal using a regular screwdriver
CC
operating range (DS1245Y)
CC
operating range
1 of 10
PIN ASSIGNMENT
PIN DESCRIPTION
A0 - A16
DQ0 - DQ7
V
GND
NC
CE
WE
OE
GND
CC
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
A15
A16
V
WE
NC
NC
OE
CE
CC
(Uses DS9034PC+ or DS9034PCI+ PowerCap)
1024k Nonvolatile SRAM
GND
DQ0
DQ1
DQ2
34-Pin PowerCap Module (PCM)
A16
A14
A12
NC
A7
A6
A5
A4
A3
A2
A1
A0
32-Pin Encapsulated Package
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
740-mil Extended
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
GND V
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
BAT
DS1245Y/AB
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
V
A15
NC
WE
A13
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
34
33
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
CC
NC
NC
A14
A13
A12
A11
A10
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0

Related parts for DS1245Y-100

DS1245Y-100 Summary of contents

Page 1

... Low-power CMOS  Read and write access times  Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time  Full ±10% V operating range (DS1245Y) CC  Optional ±5% V operating range CC (DS1245AB)  Optional industrial temperature range of -40° ...

Page 2

... ODW DATA RETENTION MODE The DS1245AB provides full functional capability for V 4.5 volts. The DS1245Y provides full functional capability for V protects by 4.25 volts. Data is maintained in the absence of V The nonvolatile static RAMs constantly monitor V automatically write-protect themselves, all inputs become “don’t care,” and all outputs become high impedance ...

Page 3

... After a DS1245 PCM is reflow soldered, a DS9034PC PowerCap is snapped on top of the PCM to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper attachment. DS1245 PowerCap Modules and DS9034PC PowerCaps are ordered separately and shipped in separate containers. See the DS9034PC data sheet for further information DS1245Y/AB ...

Page 4

... See Note 10) A TYP MAX UNITS NOTES 5.0 5.25 V 5 ±5% for DS1245AB ±10% for DS1245Y) CC TYP MAX UNITS NOTES µA +1.0 µA +1 µA 200 600 µA 50 150 85 mA 4.62 4.75 V 4.37 4 ...

Page 5

... Output Hold from Address Change Write Cycle Time Write Pulse Width Address Setup Time Write Recovery Time Output High Z from WE Output Active from WE Data Setup Time Data Hold Time = 5V ±5% for DS1245AB ±10% for DS1245Y See Note 10 DS1245AB-70 DS1245Y-70 SYMBOL MIN MAX ...

Page 6

... READ CYCLE SEE NOTE 1 WRITE CYCLE 1 SEE NOTES and DS1245Y/AB ...

Page 7

... WRITE CYCLE 2 SEE NOTES and 13 POWER-DOWN/POWER-UP CONDITION DS1245Y/AB ...

Page 8

... REC SYMBOL MIN during write cycle, the output buffers remain in a high impedance state. IH and . t is measured from the latter going high going high DS1245Y/ See Note 10) A TYP MAX UNITS NOTES µs 1.5 µs µ 125 +25°C) A TYP MAX UNITS ...

Page 9

... Input pulse Rise and Fall Times SUPPLY TOLERANCE 5V ± ± ± ± ± 10% 5V ± 10% 5V ± 10% 5V ± 10% OUTLINE NO. MDT32+6 21-0245 PC2+3 21-0246 DS1245Y/AB SPEED GRADE PIN-PACKAGE (ns) 32 740 EDIP 70 34 PowerCap 740 EDIP 70 34 PowerCap 740 EDIP 70 34 PowerCap 740 EDIP ...

Page 10

... MIN/MAX information from the AC 11/10 Electrical Characteristics table; updated the Ordering Information table (removed -85, -100, and -120 parts and leaded -70 parts); removed the PowerCap module drawings and updated the Package Information table DESCRIPTION DS1245Y/AB PAGES CHANGED 10, 11 ...

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