DS1250W-150+ Maxim Integrated Products, DS1250W-150+ Datasheet - Page 7

• Manufacturer Part Number: DS1250W-150+
• Description: IC NVSRAM 4MBIT 150NS 32DIP
• Manufacturer: Maxim Integrated Products

Specifications of DS1250W-150+

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4M (512K x 8)
• Speed: 150ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 32-DIP Module (600 mil), 32-EDIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

POWER-DOWN/POWER-UP CONDITION
POWER-DOWN/POWER-UP TIMING
WARNING:
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery
backup mode.
NOTES:
1.
2.
3. t
4. t
5. These parameters are sampled with a 5 pF load and are not 100% tested.
6. If the
7. If the
PARAMETER
V
V
V
V
V
PARAMETER
Expected Data Retention Time
CC
CC
CC
CC
CC
going low to the earlier of
buffers remain in a high-impedance state during this period.
buffers remain in high-impedance state during this period.
WE
OE
WP
DH
Fail Detect to
slew from V
slew from 0V to V
Valid to
Valid to End of Write Protection
, t
is specified as the logical AND of
= V
is high for a Read Cycle.
DS
CE
CE
are measured from the earlier of
IH
or V
low transition occurs simultaneously with or latter than the
CE
high transition occurs prior to or simultaneously with the
TP
and
IL
. If
CE
to 0V
WE
OE
and
TP
Inactive
= V
WE
CE
IH
Inactive
during write cycle, the output buffers remain in a high-impedance state.
or
WE
going high.
SYMBOL
SYMBOL
CE
CE
t
t
t
t
REC
or
t
and
t
PD
PU
DR
F
R
WE
7 of 9
WE
going high.
. t
MIN
MIN
150
150
WP
10
is measured from the latter of
TYP
TYP
WE
WE
MAX
MAX
125
1.5
2
high transition, the output
low transition, the output
(T
A
UNITS
UNITS
: See Note 10)
years
ms
ms
(T
µs
µs
µs
A
= +25°C)
CE
NOTES
NOTES
DS1250W
or
11
9
WE