AT28C16-15TC Atmel, AT28C16-15TC Datasheet

IC EEPROM 16KBIT 150NS 28TSOP

AT28C16-15TC

Manufacturer Part Number
AT28C16-15TC
Description
IC EEPROM 16KBIT 150NS 28TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT28C16-15TC

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
16K (2K x 8)
Speed
150ns
Interface
Parallel
Voltage - Supply
4.5 V ~ 5.5 V
Operating Temperature
0°C ~ 70°C
Package / Case
28-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
AT28C16-15TC
Manufacturer:
ATMEL
Quantity:
238
Features
Description
The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only
byte writable nonvolatile memory (EEPROM). Standby current is typically less than
100 A. The AT28C16-T is written like a Static RAM, eliminating complex program-
ming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration
in-system. Data retention is specified as 10 years minimum, precluding the necessity
for batteries. Three access times have been specified to allow for varying layers of
buffering between the memory and the PCMCIA interface.
The AT28C16-T is accessed like a Static RAM for read and write operations. During a
byte write, the address and data are latched internally. Following the initiation of a
write cycle, the device will go to a busy state and automatically write the latched data
using an internal control timer. The device provides two methods for detecting the end
of a write cycle; the RDY/BUSY output and DATA POLLING of I/O
Pin Configurations
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
RDY/BUSY
NC
Ideal Rewritable Attribute Memory
Simple Write Operation
End of Write Detection
High Reliability
Single 5-Volt Supply for Read and Write
Very Low Power
– Self-Timed Byte Writes
– On-chip Address and Data Latch for SRAM-like Write Operation
– Fast Write Cycle Time - 1 ms
– 5-Volt-Only Nonvolatile Writes
– RDY/BUSY Output
– DATA Polling
– Endurance: 100,000 Write Cycles
– Data Retention: 10 Years Minimum
– 30 mA Active Current
– 100 µA Standby Current
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
Ready/Busy Output
No Connect
RDY/BUSY
VCC
WE
OE
NC
NC
NC
A9
A8
A7
A6
A5
A4
A3
1
2
3
4
5
6
7
8
9
10
11
12
13
14
Top View
TSOP
7
.
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
16K (2K x 8)
PCMCIA
Nonvolatile
Attribute
Memory
AT28C16-T
Rev. 0258C–10/98
1

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AT28C16-15TC Summary of contents

Page 1

... Three access times have been specified to allow for varying layers of buffering between the memory and the PCMCIA interface. The AT28C16-T is accessed like a Static RAM for read and write operations. During a byte write, the address and data are latched internally. Following the initiation of a write cycle, the device will busy state and automatically write the latched data using an internal control timer ...

Page 2

... Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0. Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V AT28C16-T 2 *NOTICE: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and ...

Page 3

... OE low, CE high or WE high inhibits byte write cycles. CHIP CLEAR: The contents of the entire memory of the AT28C16-T may be set to the high state by the Chip Clear operation. By setting CE low and OE to 12V, the chip is cleared when low pulse is applied to WE. ...

Page 4

... Symbol Parameter I Input Load Current LI I Output Leakage Current Standby Current CMOS SB1 Standby Current TTL SB2 Active Current Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH AT28C16-T 4 AT28C16-15T 0°C - 70°C -40°C - 85° ( ( Condition ...

Page 5

... OUT Note: 1. This parameter is characterized and is not 100% tested after the address transition without impact on t ACC after the falling edge of CE without impact pF). L Output Test Load Max 6 12 AT28C16-15T Min Max Units 150 150 150 ACC after an address change ...

Page 6

... Data Hold Time From WE High (OE-WE) t Output Enable Hold Time From WE High H OEH t (CE-WE) t Chip Enable Hold Time From WE High (B) t Delay From WE High To BUSY Asserted (W) t Write Cycle Time Write Waveforms AT28C16-T 6 Address Setup Time Min Max Units 100 1000 ...

Page 7

Data Polling Waveforms Note: 1. Data Polling AC Timing Characteristics are the same as the AC Read Characteristics. Chip Erase Waveforms sec (min msec (min 12.0 0.5V ...

Page 8

... The following table lists standard Atmel products that can be ordered. Device Numbers Speed AT28C16 15 Die Products Reference Section: Parallel EEPROM Die Products 28T 28-Lead, Plastic Thin Small Outline Package (TSOP) AT28C16-T 8 Ordering Code AT28C16-15TC AT28C16-15TI Package and Temperature Combinations TC, TI Package Type Package Operation Range 28T Commercial ( 28T Industrial ...

Page 9

Packaging Information 28T, 28-Lead, Plastic Thin Small Outline Package (TSOP) Dimensions in Millimeters and (Inches)* INDEX MARK AREA 11.9 (0.469) 11.7 (0.461) 0.27 (0.011) 0.55 (0.022) 0.18 (0.007) BSC 7.15 (0.281) REF 8.10 (0.319) 7.90 (0.311) 0.20 (0.008) 0.10 (0.004) ...

Page 10

... AT28C16-T 10 ...

Page 11

11 ...

Page 12

... No licenses to patents or other intellectual prop Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel’s products are not authorized for use as critical components in life suppor t devices or systems. ...

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