AT93C46A-10SI Atmel, AT93C46A-10SI Datasheet - Page 5

• Manufacturer Part Number: AT93C46A-10SI
• Description: IC EEPROM 1KBIT 2MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT93C46A-10SI

• Format - Memory: EEPROMs - Serial
• Memory Type: EEPROM
• Memory Size: 1K (128 x 8 or 64 x 16)
• Speed: 2MHz
• Interface: 3-Wire Serial
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Functional
Description
Table 5. Instruction Set for the AT93C46A
0539J–SEEPR–11/04
Instruction
ERASE
WRITE
EWEN
WRAL
EWDS
READ
ERAL
SB
1
1
1
1
1
1
1
Op Code
10
00
11
01
00
00
00
The AT93C46A is accessed via a simple and versatile three-wire serial communication
interface. Device operation is controlled by seven instructions issued by the host pro-
cessor. A valid instruction starts with a rising edge of CS and consists of a start bit (logic
“1”) followed by the appropriate op code and the desired memory address location.
READ (READ): The Read (READ) instruction contains the address code for the mem-
ory location to be read. After the instruction and address are decoded, data from the
selected memory location is available at the serial output pin DO. Output data changes
are synchronized with the rising edges of serial clock SK. It should be noted that a
dummy bit (logic “0”) precedes the 16-bit data output string.
ERASE/WRITE ENABLE (EWEN): To assure data integrity, the part automatically goes
into the Erase/Write Disable (EWDS) state when power is first applied. An Erase/Write
Enable (EWEN) instruction must be executed first before any programming instructions
can be carried out. Please note that once in the EWEN state, programming remains
enabled until an EWDS instruction is executed or V
ERASE (ERASE): The Erase (ERASE) instruction programs all bits in the specified
memory location to the logical “1” state. The self-timed erase cycle starts once the
Erase instruction and address are decoded. The DO pin outputs the ready/busy status
of the part if CS is brought high after being kept low for a minimum of 250 ns (t
logic “1” at pin DO indicates that the selected memory location has been erased and the
part is ready for another instruction.
WRITE (WRITE): The Write (WRITE) instruction contains the 16 bits of data to be writ-
ten into the specified memory location. The self-timed programming cycle, t
after the last bit of data is received at serial data input pin DI. The DO pin outputs the
ready/busy status of the part if CS is brought high after being kept low for a minimum of
250 ns (t
indicates that the memory location at the specified address has been written with the
data pattern contained in the instruction and the part is ready for further instructions. A
ready/busy status cannot be obtained if the CS is brought high after the end of the self-
timed programming cycle, t
ERASE ALL (ERAL): The Erase All (ERAL) instruction programs every bit in the mem-
ory array to the logic “1” state and is primarily used for testing purposes. The DO pin
outputs the ready/busy status of the part if CS is brought high after being kept low for a
minimum of 250 ns (t
WRITE ALL (WRAL): The Write All (WRAL) instruction programs all memory locations
with the data patterns specified in the instruction. The DO pin outputs the ready/busy
Address
11XXXX
10XXXX
01XXXX
00XXXX
A
A
A
x 16
5
5
5
− A
− A
− A
CS
). A logic “0” at DO indicates that programming is still in progress. A logic “1”
0
0
0
Comments
Reads data stored in memory, at specified address
Erase memory location A
Writes memory location A
Write enable must precede all programming modes
Erases all memory locations. Valid only at V
Writes all memory locations. Valid only at V
Disables all programming instructions
CS
). The ERAL instruction is valid only at V
WP
.
n
n
− A
− A
0
0
CC
power is removed from the part.
CC
CC
= 4.5V to 5.5V
= 4.5V to 5.5V
CC
= 5.0V ± 10%.
AT93C46A
WP
, starts
CS
). A
5