AT49BV8192AT-90TI Atmel, AT49BV8192AT-90TI Datasheet - Page 13

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AT49BV8192AT-90TI

Manufacturer Part Number
AT49BV8192AT-90TI
Description
IC FLASH 8MBIT 90NS 40TSOP
Manufacturer
Atmel
Datasheet

Specifications of AT49BV8192AT-90TI

Format - Memory
FLASH
Memory Type
FLASH
Memory Size
8M (1M x 8 or 512K x 16)
Speed
90ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
40-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Program Cycle Characteristics
Program Cycle Waveforms
Sector or Chip Erase Cycle Waveforms
Notes:
1049K–FLASH–11/02
Symbol
t
t
t
t
t
t
t
t
BP
AS
AH
DS
DH
WP
WPH
EC
1. OE must be high only when WE and CE are both low.
2. For chip erase, the address should be 5555. For sector erase, the address depends on what sector is to be erased.
3. For chip erase, the data should be 10H, and for sector erase, the data should be 30H.
(See note 4 under Command Definitions.)
Parameter
Byte/Word Programming Time
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Write Pulse Width
Write Pulse Width High
Erase Cycle Time
A0-A18
DATA
WE
A0-A18
OE
CE
DATA
WE
OE
CE
(1)
t
AS
t AS
5555
5555
t AH
t AH
WORD 0
BYTE/
AA
AA
t WP
t DS
t DS
t WP
2AAA
2AAA
t DH
WORD 1
BYTE/
55
t DH
55
5555
t WPH
WORD 2
5555
BYTE/
80
PROGRAM CYCLE
t WPH
A0
5555
WORD 3
BYTE/
AT49BV/LV008A(T)/8192A(T)
AA
ADDRESS
INPUT DATA
2AAA
WORD 4
BYTE/
55
Min
70
70
70
50
0
0
Note 2
t BP
WORD 5
Note 3
BYTE/
Typ
t EC
30
5555
AA
Max
10
seconds
Units
µs
ns
ns
ns
ns
ns
ns
13

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