AT45DB041D-SU-2.5 Atmel, AT45DB041D-SU-2.5 Datasheet - Page 46

• Manufacturer Part Number: AT45DB041D-SU-2.5
• Description: IC FLASH 4MBIT 66MHZ 8SOIC
• Manufacturer: Atmel

Specifications of AT45DB041D-SU-2.5

• Format - Memory: FLASH
• Memory Type: DataFLASH
• Memory Size: 4M (2048 pages x 264 bytes)
• Speed: 66MHz
• Interface: SPI, RapidS
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SOIC EIAJ
• Density: 4 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3|3.3 V
• Sector Size: 64KByte x 8
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.5 V
• Maximum Operating Current: 15 mA
• Mounting Style: SMD/SMT
• Organization: 64 KB x 8
• Current, Input, Leakage: 1 μA
• Current, Operating: 11 mA (Read), 12 mA (Program/Erase)
• Current, Output, Leakage: 1
• Data Retention: 20 yrs.
• Package Type: EIAJ SOIC
• Temperature, Operating: -40 to +85 °C
• Time, Access: 8 ns
• Time, Address Hold: 5
• Time, Address Setup: 5
• Time, Fall: 6.8 ns
• Time, Rise: 6.8 ns
• Voltage, Input, High: 1.75 to 2.52 V
• Voltage, Input, Low: 0.75 to 1.08 V
• Voltage, Output, High: 2.5 to 3.4 V
• Voltage, Output, Low: 0.4 V
• Voltage, Supply: 2.5 to 3.6 V
• Access Time (max): 8ns
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Program/erase Volt (typ): 2.5 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.5V
• Operating Supply Voltage (max): 3.6V
• Supply Current: 15mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

25. Auto Page Rewrite Flowchart
Figure 25-1. Algorithm for Programming or Reprogramming of the Entire Array Sequentially
Notes:
46
1. This type of algorithm is used for applications in which the entire array is programmed sequentially, filling the array page-by-
2. A page can be written using either a Main Memory Page Program operation or a Buffer Write operation followed by a Buffer
3. The algorithm above shows the programming of a single page. The algorithm will be repeated sequentially for each page
AT45DB041D
page.
to Main Memory Page Program operation.
within the entire array.
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
START
END
provide address
and data
MEMORY PAGE PROGRAM
BUFFER TO MAIN
BUFFER WRITE
(84H, 87H)
(83H, 86H)
3595P–DFLASH–09/09