CY7C1355A-117AC Cypress Semiconductor Corp, CY7C1355A-117AC Datasheet

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CY7C1355A-117AC

Manufacturer Part Number
CY7C1355A-117AC
Description
IC SRAM 9MBIT 117MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1355A-117AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
117MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.465 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1471
Cypress Semiconductor Corporation
Document #: 38-05539 Rev. **
Features
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Note:
• No Bus Latency™ (NoBL™) architecture eliminates
• Can support up to 133-MHz bus operations with zero
• Pin compatible and functionally equivalent to ZBT™
• Internally self-timed output buffer control to eliminate
• Registered inputs for flow-through operation
• Byte Write capability
• 3.3V/2.5V I/O power supply
• Fast clock-to-output times
• Clock Enable (CEN) pin to enable clock and suspend
• Synchronous self-timed writes
• Asynchronous Output Enable
• Offered in JEDEC-standard 100 TQFP, 119-Ball BGA and
• Three chip enables for simple depth expansion.
• Automatic Power-down feature available using ZZ
• JTAG boundary scan for BGA and fBGA packages
• Burst Capability—linear or interleaved burst order
• Low standby power
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
dead cycles between write and read cycles.
wait states
— Data is transferred on every clock
devices
the need to use OE
— 6.5 ns (for 133-MHz device)
— 7.0 ns (for 117-MHz device)
— 7.5 ns (for 100-MHz device)
operation
165-Ball fBGA packages
mode or CE deselect
9-Mbit (256K x 36/512K x 18) Flow-Through
3901 North First Street
133 MHz
PRELIMINARY
250
6.5
30
SRAM with NoBL™ Architecture
Functional Description
The CY7C1355C/CY7C1357C is a 3.3V, 256K x 36/ 512K x 18
Synchronous Flow-through Burst SRAM designed specifically
to support unlimited true back-to-back Read/Write operations
without
CY7C1355C/CY7C1357C is equipped with the advanced No
Bus Latency (NoBL) logic required to enable consecutive
Read/Write operations with data being transferred on every
clock cycle. This feature dramatically improves the throughput
of data through the SRAM, especially in systems that require
frequent Write-Read transitions.
All synchronous inputs pass through input registers controlled
by the rising edge of the clock. The clock input is qualified by
the Clock Enable (CEN) signal, which when deasserted
suspends operation and extends the previous clock cycle.
Maximum access delay from the clock rise is 6.5 ns (133-MHz
device).
Write operations are controlled by the two or four Byte Write
Select (BW
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE
asynchronous Output Enable (OE) provide for easy bank
selection and output three-state control. In order to avoid bus
contention, the output drivers are synchronously three-stated
during the data portion of a write sequence.
117 MHz
220
7.0
the
30
X
) and a Write Enable (WE) input. All writes are
San Jose
insertion
,
CA 95134
[1]
100 MHz
of
Revised April 12, 2004
180
7.5
30
wait
1
, CE
CY7C1355C
CY7C1357C
2
408-943-2600
states.
, CE
3
Unit
mA
mA
) and an
ns
The

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CY7C1355A-117AC Summary of contents

Page 1

... Maximum Access Time Maximum Operating Current Maximum CMOS Standby Current Note: 1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com. Cypress Semiconductor Corporation Document #: 38-05539 Rev. ** PRELIMINARY 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Architecture Functional Description The CY7C1355C/CY7C1357C ...

Page 2

... WRITE WRITE REGISTRY DRIVERS AND DATA COHERENCY CONTROL LOGIC READ LOGIC SLEEP CONTROL CY7C1355C CY7C1357C MEMORY ARRAY INPUT E O REGISTER MEMORY ARRAY DQs F T DQP DQP INPUT E REGISTER MEMORY ARRAY INPUT E REGISTER Page DQs DQP A DQP B DQP C DQP DQs DQP A DQP B ...

Page 3

Pin Configurations DQP DDQ BYTE DDQ ...

Page 4

Pin Configurations (continued DDQ DDQ Vss/DNU 14 V ...

Page 5

Pin Configurations (continued DDQ DDQ DDQ DDQ ...

Page 6

Pin Configurations (continued 288M CE2 C DQP DDQ DDQ DDQ ...

Page 7

... Bidirectional Data I/O lines. As inputs, they feed into an on-chip data register that is triggered by the rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the addresses presented during the previous clock rise of the Read cycle. The direction of the pins is controlled by OE. When OE is asserted LOW, the pins behave as outputs ...

Page 8

Pin Definitions (continued) Name I/O TDO JTAG serial output Synchronous TDI JTAG serial input Synchronous TMS JTAG serial input Synchronous TCK JTAG-Clock /DNU Ground/DNU SS Document #: 38-05539 Rev. ** PRELIMINARY Description Serial data-out to the JTAG ...

Page 9

... WE is deasserted HIGH, and 4) ADV/LD is asserted LOW. The address presented to the address inputs is latched into the address register and presented to the memory array and control logic. The control logic determines that a read access is in progress and allows the requested data to propagate to the output buffers ...

Page 10

Interleaved Burst Address Table (MODE = Floating First Second Third Address Address Address A1: A0 A1 Mode Electrical Characteristics Parameter Description I Sleep ...

Page 11

Truth Table Address Operation Used Deselect Cycle None Deselect Cycle None Deselect Cycle None Continue Deselect Cycle None READ Cycle External (Begin Burst) READ Cycle Next (Continue Burst) NOP/DUMMY READ External (Begin Burst) ...

Page 12

Partial Truth Table for Read/Write Function (CY7C1355C) Read Write No bytes written Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write Byte C – (DQ and DQP ) ...

Page 13

IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1355C/CY7C1357C incorporates a serial boundary scan test access port (TAP). This part is fully compliant with 1149.1. The TAP operates using JEDEC-standard 3.3V or 2.5V I/O logic levels. The CY7C1355C/CY7C1357Ccontains a TAP controller, ...

Page 14

Test Data-Out (TDO) The TDO output ball is used to serially clock data-out from the registers. The output is active depending upon the current state of the TAP state machine. The output changes on the falling edge of TCK. TDO ...

Page 15

The user must be aware that the TAP controller clock can only operate at a frequency MHz, while the SRAM clock operates more than an order of magnitude faster. Because there is a large difference in the ...

Page 16

TAP Timing Test Clock (TCK) Test Mode Select (TMS) Test Data-In (TDI) Test Data-Out (TDO) TAP AC Switching Characteristics Parameter Clock t TCK Clock Cycle Time TCYC t TCK Clock Frequency TF t TCK Clock HIGH time TH t TCK ...

Page 17

TAP AC Test Conditions Input pulse levels ................................................ Input rise and fall time..................................................... 1 ns Input timing reference levels .........................................1.25V Output reference levels.................................................1.25V Test load termination supply voltage.............................1.25V TAP DC Electrical Characteristics And Operating Conditions (0°C < T < ...

Page 18

... Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. CY7C1355C CY7C1357C Description Describes the version number Reserved for Internal Use Defines memory type and architecture Defines width and density Allows unique identification of SRAM vendor Indicates the presence register Bit Size (x18 ...

Page 19

BGA Boundary Scan Order CY7C1355C (256K x 36) BIT BALL BIT # ...

Page 20

BGA Boundary Scan Order CY7C1357C (512K x 18) BIT# BALL BIT# BALL ...

Page 21

Boundary Scan Order CY7C1355C (256K x 36) BIT# BALL ID BIT# BALL 10N 39 C10 4 P11 ...

Page 22

Boundary Scan Order CY7C1357C (512K x 18) BIT# BALL ID BIT# BALL 10N 39 4 P11 ...

Page 23

Maximum Ratings (Above which the useful life may be impaired. For user guide- lines, not tested.) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Supply Voltage on V Relative to GND........ –0.5V to +4.6V ...

Page 24

Thermal Resistance Parameter Description Θ Thermal Resistance JA (Junction to Ambient) Θ Thermal Resistance JC (Junction to Case) Capacitance [19] Parameter Description C Input Capacitance IN C Clock Input Capacitance CLK C Input/Output Capacitance I/O AC Test Loads and ...

Page 25

Switching Characteristics Over the Operating Range Parameter Description t V (Typical) to the First Access POWER DD Clock t Clock Cycle Time CYC t Clock HIGH CH t Clock LOW CL Output Times t Data Output Valid after CLK Rise ...

Page 26

Switching Waveforms [26, 27, 28] Read/Write Waveforms 1 2 CLK t CENS t CENH t CH CEN t CES t CEH CE ADV/ ADDRESS D(A1 ...

Page 27

Switching Waveforms (continued) NOP, STALL AND DESELECT Cycles CYC CLK t CENS t CENH t CH CEN t CES t CEH CE ADV/ ADDRESS D(A1 ...

Page 28

Switching Waveforms (continued) [30, 31] ZZ Mode Timing CLK ZZ I SUPPLY ALL INPUTS (except ZZ) Outputs (Q) Notes: 30. Device must be deselected when entering ZZ mode. See truth table for all possible signal conditions to deselect the device. ...

Page 29

Ordering Information (continued) Speed (MHz) Ordering Code CY7C1355C-117BZC CY7C1357C-117BZC CY7C1355C-117BZI CY7C1357C-117BZI 100 CY7C1355C-100AC CY7C1357C-100AC CY7C1355C-100AI CY7C1357C-100AI CY7C1355C-100BGC CY7C1357C-100BGC CY7C1355C-100BGI ICY7C1357C-100BGI CY7C1355C-100BZC CY7C1357C-100BZC CY7C1355C-100BZI CY7C1357C-100BZI Shaded areas contain advance information. Please contact your local sales representative for availability of these parts. ...

Page 30

Package Diagrams 100-pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 100-pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05539 Rev. ** PRELIMINARY CY7C1355C CY7C1357C 51-85050-*A Page ...

Page 31

Package Diagrams (continued) Document #: 38-05539 Rev. ** PRELIMINARY 119-Lead PBGA ( 2.4 mm) BG119 CY7C1355C CY7C1357C 51-85115-*B Page ...

Page 32

... Document #: 38-05539 Rev. ** © Cypress Semiconductor Corporation, 2004. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user ...

Page 33

Document History Page Document Title: CY7C1355C/CY7C1357C 9-Mbit (256K x 36/512K x 18) Flow-Through SRAM with NoBL™ Architecture Document Number: 38-05539 REV. ECN NO. Issue Date ** 242032 See ECN Document #: 38-05539 Rev. ** PRELIMINARY Orig. of Change RKF New ...

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