CY7C1360B-166AC Cypress Semiconductor Corp, CY7C1360B-166AC Datasheet

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CY7C1360B-166AC

Manufacturer Part Number
CY7C1360B-166AC
Description
IC SRAM 9MBIT 166MHZ 100LQFP
Manufacturer
Cypress Semiconductor Corp
Datasheet

Specifications of CY7C1360B-166AC

Format - Memory
RAM
Memory Type
SRAM - Synchronous
Memory Size
9M (256K x 36)
Speed
166MHz
Interface
Parallel
Voltage - Supply
3.135 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
100-LQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
428-1542

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1360B-166AC
Manufacturer:
REI
Quantity:
100
Part Number:
CY7C1360B-166AC
Manufacturer:
CYPRESS
Quantity:
465
Cypress Semiconductor Corporation
Document #: 38-05291 Rev. *C
Features
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Shaded areas contain advance information. Please contact your local Cypress sales representative for availability of these parts.
Notes:
• Supports bus operation up to 225 MHz
• Available speed grades are 225, 200 and 166 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
• 2.5V/3.3V I/O operation
• Fast clock-to-output times
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• Offered in JEDEC-standard 100-pin TQFP, 119-ball BGA
• TQFP Available with 3-Chip Enable and 2-Chip Enable
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE
— 2.8 ns (for 225-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
Pentium
and 165-Ball fBGA packages
3
is for A version of TQFP (3 Chip Enable option) and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
®
interleaved or linear burst sequences
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
3901 North First Street
225 MHz
250
2.8
30
Functional Description
The CY7C1360B/CY7C1362B SRAM integrates 262,144 x 36
and 524,288 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable ( CE
Enables (CE
and ADV ), Write Enables ( BW
( GW ). Asynchronous inputs include the Output Enable ( OE )
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor ( ADSP ) or
Address Strobe Controller ( ADSC ) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin ( ADV ).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW causes all bytes to be written.
The CY7C1360B/CY7C1362B operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
200 MHz
2
220
and CE
3.0
30
San Jose
3
[2]
), Burst Control inputs ( ADSC , ADSP ,
,
CA 95134
[1]
X
166 MHz
, and BWE ), and Global Write
180
3.5
30
1
), depth-expansion Chip
Revised April 9, 2004
CY7C1360B
CY7C1362B
408-943-2600
Unit
mA
mA
ns

Related parts for CY7C1360B-166AC

CY7C1360B-166AC Summary of contents

Page 1

... Cypress Semiconductor Corporation Document #: 38-05291 Rev. *C 9-Mbit (256K x 36/512K x 18) Pipelined SRAM Functional Description The CY7C1360B/CY7C1362B SRAM integrates 262,144 x 36 and 524,288 x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a positive-edge-triggered Clock Input (CLK) ...

Page 2

... DQP BYTE WRITE DRIVER PIPELINED ENABLE A[1: BURST LOGIC Q0 DQ DQP B, B WRITE DRIVER MEMORY DQ DQP A, A WRITE DRIVER PIPELINED ENABLE CY7C1360B CY7C1362B OUTPUT OUTPUT MEMORY SENSE BUFFERS REGISTERS ARRAY AMPS E OUTPUT OUTPUT SENSE BUFFERS AMPS REGISTERS ARRAY DQP A DQP B DQP C ...

Page 3

... V V DDQ DDQ SSQ SSQ SSQ SSQ DDQ DDQ DDQ DDQ SSQ SSQ DQP SSQ SSQ DDQ DDQ DQP CY7C1360B CY7C1362B CY7C1362B 15 16 (512K x 18 CY7C1362B 15 16 (512K x 18 DDQ V 76 SSQ 75 NC DQP SSQ V 70 DDQ DDQ 60 V SSQ 59 DQ ...

Page 4

... Pin Configurations (continued DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ Document #: 38-05291 Rev. *C 119-ball BGA (2 Chip Enables with JTAG) CY7C1360B (256K x 36 ADSP CE A ADSC DQP ADV CLK BWE DQP MODE TMS TDI TCK CY7C1362B (512K x 18 ADSP ...

Page 5

... DDQ 72M A R MODE NC / 36M 288M CE2 DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ DDQ N DQP DDQ 72M A R MODE NC / 36M A Document #: 38-05291 Rev. *C 165-ball fBGA (3 Chip Enable with JTAG) CY7C1360B (256K x 36 CLK 18M SS TDI TMS CY7C1362B (512K x 18 ...

Page 6

... CY7C1360B–Pin Definitions TQFP TQFP 3-Chip 2-Chip Name Enable Enable 37,36,32, 37,36,32 33,34,35, 33,34,35, 43,44,45, 44,45,46, 46,47,48, 47,48,49, 49,50,81, 50,81,82, 82,99,100 92,99,100 93,94,95, 93,94,95 BWE CLK [ ADV Document #: 38-05291 Rev. *C BGA fBGA I/O P4,N4, R6,P6,A2, Input- A2,C2, A10,B2, Synchronous R2,3A, B10,P3,P4, ...

Page 7

... CY7C1360B–Pin Definitions TQFP TQFP 3-Chip 2-Chip Name Enable Enable 84 84 ADSP 85 85 ADSC 52,53,56, 52,53,56, DQs, 57,58,59, 57,58,59, DQPs 62,63,68, 62,63,68, 69,72,73, 69,72,73, 74,75,78, 74,75,78, 79,2,3,6,7, 79,2,3,6,7, 8,9,12,13,1 8,9,12,13,1 8,19,22, 8,19,22, 23,24,25, 23,24,25, 28,29,51, 28,29,51, 80,1,30 80,1,30 V 15,41,65, 15,41,65 17,40,67, ...

Page 8

... CY7C1360B–Pin Definitions TQFP TQFP 3-Chip 2-Chip Name Enable Enable V 5,10,21,26, 5,10,21,26, SSQ 55,60,71, 55,60,71 4,11,20,27, 4,11,20,27, DDQ 54,61,70, 54,61,70 MODE 31 31 TDO - - TDI - - TMS - - TCK - - NC 14,16,66, 14,16,38, 42,39,38 39,42,43, 66, Document #: 38-05291 Rev. *C (continued) BGA fBGA I I/O Ground A1,F1,J1, C3,C9,D3, I/O Power ...

Page 9

... Synchronous - A6 Input- Synchronous F4 B8 Input- Asynchronous G4 A9 Input- Synchronous CY7C1360B CY7C1362B Description Address Inputs used to select one of the 512K address locations. Sampled at the rising edge of the CLK if ADSP or ADSC is active LOW, and CE [ and CE are sampled active the two-bit counter. . Byte Write Select Inputs, active LOW. Qualified with BWE to conduct Byte Writes to the SRAM ...

Page 10

... K5,K6,K7, L5,L6,L7, M5,M6,M7, N4, I/O Ground CY7C1360B CY7C1362B Description Address Strobe from Processor, sampled on the rising edge of CLK, active LOW. When asserted LOW, addresses presented to the device are captured in the address registers. A also loaded into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recog- nized ...

Page 11

... N2,N7,N10, P6,R1, N5,N11,P1, R5,R7, A1,B11,P2, T1,T4,U6 R2,N6 CY7C1360B CY7C1362B Description Power supply for the I/O circuitry. Selects Burst Order. When tied to GND selects linear burst sequence. When tied to V floating selects interleaved burst sequence. This is a strap pin and should remain static during device operation ...

Page 12

... Byte Write operation will remain unaltered. A synchronous self-timed Write mechanism has been provided to simplify the Write operations. Because the CY7C1360B/CY7C1362B is a common I/O device, the Output Enable (OE) must be deasserted HIGH before presenting data to the DQs inputs. Doing so will three-state the output drivers ...

Page 13

... RZZI Document #: 38-05291 Rev. *C Linear Burst Address Table (MODE = GND) Fourth First Address Address , Test Conditions ZZ > V – 0. > V – 0. < 0.2V This parameter is sampled This parameter is sampled CY7C1360B CY7C1362B Second Third Address Address Min. Max CYC 2t CYC 2t CYC 0 Fourth Address ...

Page 14

... valid. Appropriate write will be done based on which byte write is active. [A:D] CY7C1360B CY7C1362B L-H Three-State L-H Three-State L-H Three-State L-H Three-State L-H Three-State Three-State L L-H Three-State L L L-H Three-State L L-H Three-State L L-H Three-State L-H Three-State L L-H Three-State L L-H D and Writes may occur only on subsequent clocks ...

Page 15

... Partial Truth Table for Read/Write Function (CY7C1360B) Read Read Write Byte A – (DQ and DQP ) A A Write Byte B – (DQ and DQP ) B B Write Bytes B, A Write Byte C – (DQ and DQP ) C C Write Bytes C, A Write Bytes C, B Write Bytes Write Byte D – (DQ ...

Page 16

... IEEE 1149.1 Serial Boundary Scan (JTAG) The CY7C1360B/CY7C1362B incorporates a serial boundary scan test access port (TAP). This port operates in accordance with IEEE Standard 1149.1-1990 but does not have the set of functions required for full 1149.1 compliance. These functions from the IEEE specification are excluded because their inclusion places an added delay in the critical speed path of the SRAM ...

Page 17

... TAP controller’s capture set-up plus hold time (t The SRAM clock input might not be captured correctly if there PRELOAD portion way in a design to stop (or slow) the clock during a SAMPLE/PRELOAD instruction. If this is an issue still CY7C1360B CY7C1362B instructions. Unlike the SAMPLE/PRELOAD plus t ). ...

Page 18

... Reserved These instructions are not implemented but are reserved for future use. Do not use these instructions CYC TL t TMSS t TMSH t TDIS t TDIH DON’T CARE [10, 11] Over the Operating Range Description /t = 1ns CY7C1360B CY7C1362B TDOV t TDOX UNDEFINED Min. Max Page ...

Page 19

... DDQ DDQ DDQ I = 100 µ DDQ V DDQ V DDQ V DDQ V DDQ V DDQ GND < V < DDQ CY7C1360B CY7C1362B 1.25V 50 TDO 20pF O Min. Max. = 3.3V 2.4 = 2.5V 2.0 = 3.3V 2.9 = 2.5V 2.1 = 3.3V 0.4 = 2.5V 0.4 = 3.3V 0.2 = 2.5V 0.2 = 3. ...

Page 20

... Do Not Use: This instruction is reserved for future use. Do Not Use: This instruction is reserved for future use. Places the bypass register between TDI and TDO. This operation does not affect SRAM operations. CY7C1360B CY7C1362B Description Describes the version number Reserved for Internal Use ...

Page 21

... BGA Boundary Scan Order CY7C1360B (256K x 36) BIT BALL Signal BIT # ID Name # 1 CLK BWE ADSC ADSP ADV DQP DQP Document #: 38-05291 Rev. *C BALL Signal BIT# BALL ID ID Name MODE 7 P2 DQP Internal Internal Internal Internal Internal Internal Internal C D2 DQP ...

Page 22

... Boundary Scan Order CY7C1360B (256K x 36) BIT# BALL Signal BIT# ID Name 1 B6 CLK BWE ADSC ADSP ADV 43 8 B10 A10 C11 DQP E10 F10 G10 D10 D11 E11 F11 G11 H11 J10 K10 L10 M10 J11 K11 L11 DQ 62 ...

Page 23

... V ≤ /2), undershoot: V (AC) > –2V (Pulse width less than t CYC IL (min.) within 200 ms. During this time V < CY7C1360B CY7C1362B Ambient Temperature V DD 0°C to +70°C 3.3V – 5%/+10% 2.5V – 5% –40°C to +85°C Min. Max. 3.135 3.6 3.135 V DD 2.375 2 ...

Page 24

... Test Conditions T = 25° MHz 3.3V 2.5V DDQ R = 317Ω 3.3V OUTPUT 351Ω INCLUDING JIG AND (b) SCOPE R = 1667Ω 2.5V OUTPUT =1538Ω INCLUDING JIG AND (b) SCOPE CY7C1360B CY7C1362B TQFP BGA fBGA Package Package Package TQFP BGA fBGA Package Package Package ...

Page 25

... DDQ is the time that the power needs to be supplied above V POWER is less than t and t is less than t to eliminate bus contention between SRAMs when sharing the same OELZ CHZ CLZ CY7C1360B CY7C1362B 200 MHz 166 MHz Max Min. Max Min 5.0 6 ...

Page 26

... OEV OEHZ t OELZ t DOH Q(A2) Q( Q(A1) DON’T CARE UNDEFINED is HIGH and CE is LOW. When CE is HIGH CY7C1360B CY7C1362B A3 Burst continued with new base address Deselect cycle t CHZ Q( Q( Q(A2) Q( Burst wraps around to its initial state BURST READ is HIGH LOW HIGH ...

Page 27

... Full width Write can be initiated by either GW LOW HIGH, BWE LOW and BW Document #: 38-05291 Rev WES t WEH ADV suspends burst D(A2 BURST WRITE DON’T CARE UNDEFINED LOW. X CY7C1360B CY7C1362B ADSC extends burst t ADS t ADH A3 t WES t WEH t t ADVS ADVH D( D( ...

Page 28

... The data bus (Q) remains in high-Z following a Write cycle, unless a new Read access is initiated by ADSP or ADSC . 25 HIGH. Document #: 38-05291 Rev WES t WEH OELZ D(A3) t OEHZ Q(A2) Single WRITE DON’T CARE UNDEFINED CY7C1360B CY7C1362B A5 D(A5) Q(A4) Q(A4+1) Q(A4+2) Q(A4+3) BURST READ A6 D(A6) Back-to-Back WRITEs Page ...

Page 29

... CY7C1360B-225AC CY7C1362B-225AC CY7C1360B-225AI CY7C1362B-225AI CY7C1360B-225AJC CY7C1362B-225AJC CY7C1360B-225AJI CY7C1362B-225AJI CY7C1360B-225BGC CY7C1362B-225BGC CY7C1360B-225BGI CY7C1362B-225BGI CY7C1360B-225BZC CY7C1362B-225BZC CY7C1360B-225BZI CY7C1362B-225BZI Shaded areas contain advance information. Please contact your local sales representative for availability of these parts. Document #: 38-05291 Rev ZZI I DDZZ High-Z DON’T CARE ...

Page 30

... CY7C1362B-200AC CY7C1360B-200AI CY7C1362B-200AI CY7C1360B-200AJC CY7C1362B-200AJC CY7C1360B-200AJI CY7C1362B-200AJI CY7C1360B-200BGC CY7C1362B-200BGC CY7C1360B-200BGI CY7C1362B-200BGI CY7C1360B-200BZC CY7C1362B-200BZC CY7C1360B-200BZI CY7C1362B-200BZI 166 CY7C1360B-166AC CY7C1362B-166AC CY7C1360B-166AI CY7C1362B-166AI CY7C1360B-166AJC CY7C1362B-166AJC CY7C1360B-166AJI CY7C1362B-166AJI CY7C1360B-166BGC CY7C1362B-166BGC CY7C1360B-166BGI ICY7C1362B-166BGI CY7C1360B-166BZC CY7C1362B-166BZC CY7C1360B-166BZI CY7C1362B-166BZI Shaded areas contain advance information. Please contact your local sales representative for availability of these parts. ...

Page 31

... Package Diagrams 100-pin Thin Plastic Quad Flatpack ( 1.4 mm) A101 Document #: 38-05291 Rev. *C CY7C1360B CY7C1362B 51-85050-A Page ...

Page 32

... Package Diagrams (continued) Document #: 38-05291 Rev. *C 119-Lead PBGA ( 2.4 mm) BG119 CY7C1360B CY7C1362B 51-85115-*B Page ...

Page 33

... Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges. Cypress products are not warranted nor intended to be used for medical, life-support, life-saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. 165-Ball FBGA ( 1.2 mm) BB165A CY7C1360B CY7C1362B 51-85122-*C ...

Page 34

... Document History Page Document Title: CY7C1360B/CY7C1362B 9-Mbit (256K x 36/512K x 18) Pipelined SRAM Document #: 38-05291 Rev. *C REV. ECN NO. Issue Date ** 114766 08/08/02 *A 117939 08/20/02 *B 205060 See ECN *C 225181 See ECN Document #: 38-05291 Rev. *C Orig. of Change RCS New Data Sheet RCS Added A0 and A1 to 165 fBGA pinout ...

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