NAND256W3A2BZA6E NUMONYX, NAND256W3A2BZA6E Datasheet - Page 50
NAND256W3A2BZA6E
Manufacturer Part Number
NAND256W3A2BZA6E
Description
IC FLASH 256MBIT 55VFBGA
Manufacturer
NUMONYX
Datasheet
1.NAND128W3A2BN6E.pdf
(59 pages)
Specifications of NAND256W3A2BZA6E
Format - Memory
FLASH
Memory Type
FLASH - Nand
Memory Size
256M (32M x 8)
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
55-VFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Speed
-
Other names
497-5039
497-5039
497-5039
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NAND256W3A2BZA6E
Manufacturer:
MICRON
Quantity:
9 130
Company:
Part Number:
NAND256W3A2BZA6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Part Number:
NAND256W3A2BZA6E
Manufacturer:
NUMONY
Quantity:
20 000
DC and AC parameters
10.2
50/59
Data protection
The Numonyx NAND device is designed to guarantee data protection during power
transitions.
A V
In the V
Low (V
figure.
Figure 35. Data protection
DD
detection circuit disables all NAND operations, if V
IL
DD
) to guarantee hardware protection during power transitions as shown in the below
V DD
range from V
W
Nominal Range
LKO
V LKO
Locked
to the lower limit of nominal range, the WP pin should be kept
Locked
DD
is below the V
NAND128-A, NAND256-A
Ai11086
LKO
threshold.