CY7C1399B-15VXI Cypress Semiconductor Corp, CY7C1399B-15VXI Datasheet - Page 3

• Manufacturer Part Number: CY7C1399B-15VXI
• Description: IC SRAM 256KBIT 15NS 28SOJ
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY7C1399B-15VXI

• Format - Memory: RAM
• Memory Type: SRAM - Asynchronous
• Memory Size: 256K (32K x 8)
• Speed: 15ns
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOJ
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05071 Rev. *D
Electrical Characteristics
Capacitance
AC Test Loads and Waveforms
Equivalent to:
V
V
V
V
I
I
I
I
I
I
C
C
C
IX
OZ
OS
CC
SB1
SB2
Note:
Parameter
5. Tested initially and after any design or process changes that may affect these parameters.
OH
OL
IH
IL
IN
IN
OUT
: Addresses
: Controls
OUTPUT
Parameter
[5]
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Output Leakage Current
Output Short Circuit
Current
V
Supply Current
Automatic CE Power-Down
Current — TTL Inputs
Automatic CE Power-Down
Current — CMOS Inputs
OUTPUT
THÉVENIN EQUIVALENT
CC
3.3V
INCLUDING
Operating
JIG AND
Description
[3]
SCOPE
167Ω
C
L
Over the Operating Range (continued)
R1 317Ω
Input Capacitance
Output Capacitance
1.73V
[4]
Description
R2
351Ω
V
V
GND ≤ V
Output Disabled
V
V
f = f
Max. V
V
f = f
Max. V
≥ V
WE≥V
f=f
CC
CC
CC
CC
IN
MAX
CC
MAX
MAX
≥ V
= Min., I
= Min., I
= Max., V
= Max., I
CC
– 0.3V, or V
CC
CC
IH
= 1/t
–0.3V or WE≤ 0.3V,
I
, or V
Test Conditions
, CE ≥ V
, CE ≥ V
≤ V
OH
OL
RC
OUT
CC
OUT
IN
T
= 4.0 mA
,
= –2.0 mA
A
≤ V
CC
= 0 mA,
IH
IN
= 25°C, f = 1 MHz, V
= GND
,
–0.3V, V
IL
≤ 0.3V,
,
Test Conditions
IN
GND
3.0V
L
L
≤ 3 ns
CC
Min.
–0.3
2.4
2.2
–1
–5
10%
= 3.3V
1399B-15
+0.3V
Max.
–300
ALL INPUT PULSES
V
500
0.4
0.8
+1
+5
50
50
90%
5
4
CC
Max.
5
6
6
Min.
–0.3
2.4
2.2
–1
–5
1399B-20
CY7C1399B
+0.3V
Max.
–300
V
500
90%
0.4
0.8
+1
+5
45
50
Page 3 of 10
5
4
CC
10%
Unit
pF
pF
pF
≤ 3 ns
Unit
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V