M29F040B70N6 NUMONYX, M29F040B70N6 Datasheet - Page 3

• Manufacturer Part Number: M29F040B70N6
• Description: IC FLASH 4MBIT 70NS 32TSOP
• Manufacturer: NUMONYX

Specifications of M29F040B70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 4M (512K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 2. Absolute Maximum Ratings
Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
SUMMARY DESCRIPTION
The M29F040B is a 4 Mbit (512Kb x8) non-volatile
memory that can be read, erased and repro-
grammed. These operations can be performed us-
ing a single 5V supply. On power-up the memory
defaults to its Read mode where it can be read in
the same way as a ROM or EPROM. The
M29F040B is fully backward compatible with the
M29F040.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.
Chip Enable, Output Enable and Write Enable sig-
nals control the bus operation of the memory.
They allow simple connection to most micropro-
cessors, often without additional logic.
The memory is offered in TSOP32 (8 x 20mm),
PLCC32 and PDIP32 packages and it is supplied
with all the bits erased (set to ‘1’).
Symbol
2. Minimum Voltage may undershoot to –2V during transition and for less than 20ns during transitions.
V
T
T
V
V
IO
BIAS
T
STG
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
CC
ID
A
(2)
Ambient Operating Temperature (Temperature Range Option 1)
Ambient Operating Temperature (Temperature Range Option 6)
Ambient Operating Temperature (Temperature Range Option 3)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Identification Voltage
(1)
Parameter
Table 3. Uniform Block Addresses, M29F040B
#
7
6
5
4
3
2
1
0
(Kbytes)
Size
64
64
64
64
64
64
64
64
–0.6 to 13.5
–40 to 125
–50 to 125
–65 to 150
–40 to 85
–0.6 to 6
–0.6 to 6
0 to 70
Value
Address Range
70000h-7FFFFh
60000h-6FFFFh
50000h-5FFFFh
40000h-4FFFFh
30000h-3FFFFh
20000h-2FFFFh
10000h-1FFFFh
00000h-0FFFFh
M29F040B
Unit
°C
°C
°C
°C
°C
V
V
V
3/21