M29W320EB70N6 NUMONYX, M29W320EB70N6 Datasheet - Page 36

• Manufacturer Part Number: M29W320EB70N6
• Description: IC FLASH 32MBIT 70NS 48TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of M29W320EB70N6

• Format - Memory: FLASH
• Memory Type: FLASH - Nor
• Memory Size: 32M (4Mx8, 2Mx16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DC and ac parameters
36/63
Table 10.
1. Sampled only, not 100% tested.
Table 11.
1. In Dual operations the Supply current will be the sum of I
2. Sampled only, not 100% tested.
Symbol
I
CC1
(2)(1)
V
I
I
V
V
V
V
V
I
CC2
CC3
V
I
Symbol
I
LKO
LO
PP
OH
LI
PP
OL
C
IH
ID
IL
C
(1)
OUT
IN
Input Leakage current
Output Leakage current
Supply current (Read)
Supply current (Standby)
Supply current
(Program/Erase)
Input Low voltage
Input High voltage
Voltage for
Program Acceleration
Current for
Program Acceleration
Output Low voltage
Output High voltage
Identification voltage
Program/Erase Lockout
Supply voltage
Device capacitance
DC characteristics
Input capacitance
Output capacitance
Parameter
Parameter
V
V
PP
PP
/WP
/WP
(1)
Program/Erase
Controller
Test condition
active
V
V
E = V
RP = V
V
Test condition
0V V
E = V
CC
CC
V
I
0V V
OUT
OH
I
IN
OL
f = 6MHz
= 2.7V ±10%
= 2.7V ±10%
= 0V
IL
= –100
= 1.8mA
= 0V
CC
OUT
, G = V
CC
IN
CC1
±0.2V,
±0.2V
V
(read) and I
V
V
V
V
CC
µ
CC
PP
PP
IL
A
IH
V
/WP =
or V
/WP =
,
PP
IH
CC3
Min
M29W320ET, M29W320EB
(program/erase).
V
0.7V
CC
–0.5
11.5
11.5
Min
1.8
–0.4
CC
Max
12
6
V
CC
Max
12.5
0.45
12.5
100
0.8
2.3
±1
±1
10
20
20
15
+0.3
Unit
pF
pF
Unit
mA
mA
mA
mA
µ
µ
µ
V
V
V
V
V
V
V
A
A
A