NAND512R3A2CZA6E NUMONYX, NAND512R3A2CZA6E Datasheet - Page 34

• Manufacturer Part Number: NAND512R3A2CZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512R3A2CZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Program and erase times and endurance cycles
8
9
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Program and erase times and endurance cycles
The program and erase times and the number of program/erase cycles per block are shown
in
Table 14.
Maximum ratings
Stressing the device above the ratings listed in
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the operating sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect device reliability.
Table 15.
1. Minimum voltage may undershoot to –2 V for less than 20 ns during transitions on input and I/O pins.
Page program time
Block erase time
Program/erase cycles per block (with ECC)
Data retention
Table
Maximum voltage may overshoot to V
Symbol
T
T
V
T
V
LEAD
BIAS
IO
STG
DD
14.
(1)
Program, erase times and program erase endurance cycles
Absolute maximum ratings
Parameters
Temperature under bias
Storage temperature
Lead temperature during soldering
Input or output voltage
Supply voltage
Parameter
DD
+ 2 V for less than 20 ns during transitions on I/O pins.
1.8 V devices
1.8 V devices
3 V devices
3 V devices
100,000
Min
10
Table 15: Absolute maximum
NAND flash
– 0.6
– 0.6
– 0.6
– 0.6
Typ
200
– 50
– 65
Min
2
Value
Max
500
Max
125
150
260
2.7
4.6
2.7
4.6
3
NAND512-A2C
ratings, may
cycles
years
Unit
ms
Unit
µs
°C
°C
°C
V
V
V
V