NAND512W3A2CZA6E NUMONYX, NAND512W3A2CZA6E Datasheet - Page 24

• Manufacturer Part Number: NAND512W3A2CZA6E
• Description: IC FLASH 512MBIT 63VFBGA
• Manufacturer: NUMONYX

Specifications of NAND512W3A2CZA6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 63-VFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -

Device operations
Figure 10. Sequential row read operations
Figure 11. Sequential row read block diagrams
Figure 12. Read block diagrams
1. Highest address depends on device density.
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A9-A26 (1)
A9-A26 (1)
A0-A7
A0-A7
RB
I/O
Block
Block
Read B command, x8 devices
(1st half Page)
(1st half Page)
Read B command, x8 devices
Command
Read A command, x8 devices
Read A command, x8 devices
01h/ 50h
(1st half page)
(1st half page)
code
00h/
Area A
Area A
Area A
Area A
Address inputs
(Read busy time)
(2nd half Page)
(2nd half Page)
(2nd half page)
(2nd half page)
Area B
Area B
tBLBH1
Area B
Area B
(Spare)
(Spare)
Area C
Area C
Busy
Area C
(spare)
Area C
(spare)
1st page
1st page
2nd page
Nth page
2nd page
Nth page
page output
1st
A0-A2 (x 16)
tBLBH1
A9-A26 (1)
A0-A3 (x 8)
A9-A26 (1)
Block
Block
A0-A7
Busy
Read C command, x8/x16 devices
Read A command, x16 devices
A4-A7 (x 8), A3-A7 (x 16) are don't care
Read C command, x8/x16 devices
Read A command, x16 devices
Area A
page output
Area A
(main area)
2nd
tBLBH1
Area A
(main area)
Area A/ B
Area A
Busy
Area A/ B
(Spare)
Area C
(Spare)
Area C
page output
Area C
(spare)
Nth
1st page
Area C
(spare)
2nd page
Nth page
1st page
Nth page
2nd page
NAND512-A2C
ai07597
AI07598
AI07596