CY62128BNLL-55ZXI Cypress Semiconductor Corp, CY62128BNLL-55ZXI Datasheet - Page 4

• Manufacturer Part Number: CY62128BNLL-55ZXI
• Description: IC SRAM 128KX8 PD LP 32-TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62128BNLL-55ZXI

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (128K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 001-06498 Rev. *B
Data Retention Waveform
Capacitance
Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
OUTPUT
C
C
V
I
t
t
Note:
Parameter
Parameter
CCDR
CDR
R
5. Tested initially and after any design or process changes that may affect these parameters.
6. No input may exceed V
DR
IN
OUT
INCLUDING
JIG AND
SCOPE
V
CE
CE


5V
CC
Parameter
or
JC
JA
1
2
100 pF
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery Time
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
[5]
CC
(a)
for Data Retention
R1 1800
Description
Description
CC
+ 0.5V.
Input Capacitance
Output Capacitance
[5]
990
R2
Description
OUTPUT
V
t
INCLUDING
JIG AND
SCOPE
CC
CDR
Test conditions follow standard test
methods and procedures for measuring
thermal impedance, per EIA / JESD51.
(Over the Operating Range)
5V
, min.
V
CE
V
CC
IN
1
 V
= V
V
5 pF
CC
CC
DR
Test Conditions
(b)
– 0.3V or, V
– 0.3V, or CE
= 2.0V,
DATA RETENTION MODE
R1 1800
T
V
A
CC
= 25C, f = 1 MHz,
Conditions
= 5.0V
V
Test Conditions
IN
DR
990
2
R2
 0.3V
 0.3V,
> 2V
[6]
GND
Equivalent to:
V
CC
Commercial/
Industrial
Automotive-A
Automotive-E
Rise TIme:
1 V/ns
32 SOIC
OUTPUT
66.17
30.87
10%
THÉVENIN EQUIVALENT
V
32 STSOP
90%
CC
ALL INPUT PULSES
t
105.14
R
Min.
14.09
2.0
70
, min.
0
Max.
639
9
9
Typ.
1.5
1.5
CY62128BN
32 TSOP
97.44
26.05
1.77V
Max.
15
25
MoBL
Page 4 of 12
Unit
pF
pF
90%
Fall TIme:
1 V/ns
C/W
C/W
10%
Unit
Unit
A
A
ns
ns
V

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