DS2016R-100+ Maxim Integrated Products, DS2016R-100+ Datasheet

IC SRAM 16KBIT 100NS 24SOIC

DS2016R-100+

Manufacturer Part Number
DS2016R-100+
Description
IC SRAM 16KBIT 100NS 24SOIC
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS2016R-100+

Format - Memory
RAM
Memory Type
SRAM
Memory Size
16K (2K x 8)
Speed
100ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 5.5 V
Operating Temperature
-40°C ~ 85°C
Package / Case
24-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FEATURES
§ Low-power CMOS design
§ Standby current
§ Full operation for V
§ Data retention voltage = 5.5V to 2.0V
§ Fast 5V access time
§ Reduced-speed 3V access time
§ Operating temperature range of -40°C to
§ Full static operation
§ TTL compatible inputs and outputs over
§ Available in 24-pin DIP and 24-pin SO
§ Suitable for both battery operated and battery
DESCRIPTION
The DS2016 2k x 8 3V/5V Operation Static RAM is a 16,384-bit, low-power, fully static random access
memory organized as 2048 words by 8 bits using CMOS technology. The device operates from a single
power supply with a voltage input between 2.7V and 5.5V. The chip enable input (
selection and can be used in order to achieve the minimum standby current mode, which facilitates both
battery operated and battery backup applications. The device provides access times as fast as 100ns when
operated from a 5V power supply input and also provides relatively good performance of 250ns access
while operating from a 3V input. The device maintains TTL-level inputs and outputs over the input
voltage range of 2.7V to 5.5V. The DS2016 is most suitable for low-power applications where battery
operation or battery backup for nonvolatility is required. The DS2016 is a JEDEC-standard 2k x 8 SRAM
and is pin-compatible with ROM and EPROM of similar density.
www.maxim-ic.com
- 50nA max at t
- 100nA max at t
- 1µA max at t
- DS2016-100
- DS2016-100
+85°C
voltage range of 5.5V to 2.7V
packages
backup applications
A
A
= +60°C V
A
= +25°C V
CC
= +25°C V
100ns
250ns
= 5.5V to 2.7V
CC
CC
CC
= 5.5V
= 3.0V
= 5.5V
1 of 8
PIN ASSIGNMENT
PIN DESCRIPTION
A0 to A10
DQ0 to DQ7 - Data Input/Output
V
GND
CE
WE
OE
CC
GND
DQ0
DQ1
DQ2
A7
A6
A5
A4
A3
A2
A1
A0
2k x 8 3V/5V Operation
DS2016R 24-Pin SO (300mil)
DS2016 24-Pin DIP (600mil)
1
10
11
12
2
3
4
5
6
7
8
9
- Address Inputs
- Chip Enable Input
- Write Enable Input
- Output Enable Input
- Power Supply Input 2.7V - 5.5V
- Ground
24
23
22
21
20
19
18
17
16
15
14
13
CE
Static RAM
) is used for device
V
DQ5
DQ4
DQ3
A8
A9
WE
OE
A10
CE
DQ7
DQ6
CC
DS2016
032706

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DS2016R-100+ Summary of contents

Page 1

... Operation Static RAM A10 DQ7 9 16 DQ6 10 15 DQ5 11 14 DQ4 12 13 DQ3 DS2016 24-Pin DIP (600mil) DS2016R 24-Pin SO (300mil) - Address Inputs - Chip Enable Input - Write Enable Input - Output Enable Input - Power Supply Input 2.7V - 5.5V - Ground ) is used for device CE 032706 ...

Page 2

OPERATION MODE MODE READ WRITE DESELECT STANDBY ABSOLUTE MAXIMUM RATINGS SYMBOL I/O T STG T OPR T SOLDER CAPACITANCE +25°C) PARAMETER Input Capacitance Input/Output Capacitance RECOMMENDED DC OPERATING CONDITIONS PARAMETER Power Supply Voltage Input ...

Page 3

AC CHARACTERISTICS READ CYCLE PARAMETER SYMBOL Read Cycle Time t RC Access Time t ACC t to Output Valid Output Valid Output CE OE COE Active Output High-Z from t OD ...

Page 4

RECOMMENDED DC OPERATING CONDITIONS PARAMETER Power Supply Voltage Input High Voltage Input Low Voltage Data Retention Voltage DC CHARACTERISTICS PARAMETER SYMBOL Input Leakage Current I/O Leakage Current Output High Current Output Low Current Standby Current I Standby Current I Standby ...

Page 5

AC CHARACTERISTICS WRITE CYCLE PARAMETER Write Cycle Time Write Pulse Width Address Setup Time Write Recovery Time Output High-Z from WE Output Active from WE Data Setup Time Data Hold Time DATA RETENTION CHARACTERISTICS PARAMETER SYMBOL Data Retention Supply Voltage ...

Page 6

TIMING DIAGRAM: WRITE CYCLE 1 SEE NOTES AND 7 TIMING DIAGRAM: WRITE CYCLE 2 SEE NOTES AND ...

Page 7

TIMING DIAGRAM: DATA RETENTION - POWER-UP, POWER-DOWN Figure 1 SEE NOTE 8 NOTES high for read cycles specified as the logical ...

Page 8

PACKAGE INFORMATION For the latest package outline information www.maxim-ic.com/DallasPackInfo ...

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