DS2778G+T&R Maxim Integrated Products, DS2778G+T&R Datasheet - Page 16

IC FUEL GAUGE LI+ 2CELL 14-TDFN

DS2778G+T&R

Manufacturer Part Number
DS2778G+T&R
Description
IC FUEL GAUGE LI+ 2CELL 14-TDFN
Manufacturer
Maxim Integrated Products
Datasheet

Specifications of DS2778G+T&R

Function
Fuel, Gas Gauge/Monitor
Battery Type
Lithium-Ion (Li-Ion), Lithium-Polymer (Li-Pol)
Voltage - Supply
4 V ~ 9.2 V
Operating Temperature
-20°C ~ 70°C
Mounting Type
Surface Mount
Package / Case
14-TDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2-Cell, Stand-Alone, Li+ Fuel-Gauge IC with
Protector and Optional SHA-1 Authentication
Every 1024th conversion, the ADC measures its input
offset to facilitate offset correction. Offset correction
occurs approximately once per hour. The resulting cor-
rection factor is applied to the subsequent 1023 mea-
surements. During the offset correction conversion, the
ADC does not measure the sense resistor signal. A
maximum error of 1/1024 in the Accumulated Current
register (ACR) is possible; however, to reduce the error,
the current measurement made just prior to the offset
conversion is retained in the Current register and is
substituted for the dropped current measurement in the
current accumulation process. Therefore the accumu-
lated current error due to offset correction is typically
much less than 1/1024.
The current offset bias value (COB) allows a program-
mable offset value to be added to raw current measure-
ments. The result of the raw current measurement plus
COB is displayed as the current measurement result in
the Current register and is used for current accumula-
tion. COB can be used to correct for a static offset error
or can be used to intentionally skew the current results
and therefore the current accumulation. Read and write
access is allowed to COB. Whenever the COB is writ-
ten, the new value is applied to all subsequent current
measurements. COB can be programmed in 1.56µV
steps to any value between -199.7µV and +198.1µV.
The COBR value is stored as a two’s complement value
in volatile memory and must be initialized through the
interface on power-up. The factory default value is 00h.
Figure 8. Current Offset Bias Register Format
Figure 9. RSGAIN Register
16
“X”: RESERVED
MSb
______________________________________________________________________________________
X
SC0
Current Offset Correction
OC1
MSB—ADDRESS 78h
Current Offset Bias
OC0
“S”: SIGN BIT(S)
X
MSb
S
2
0
2
6
2
-1
2
5
LSb
2
ADDRESS 7Bh
-2
2
4
2
The current blanking feature modifies current measure-
ment result prior to being accumulated in the ACR.
Current blanking occurs conditionally when a current
measurement (raw current and COBR) falls in one of
two defined ranges. The first range prevents charge
currents less than 100µV from being accumulated. The
second range prevents discharge currents less than
25µV in magnitude from being accumulated. Charge
current blanking is always performed; however, dis-
charge current blanking must be enabled by setting the
NBEN bit in the Control register. See the Control
Register Format description for additional information.
The DS2775–DS2778’s current measurement gain can
be adjusted through the RSGAIN register, which is facto-
ry calibrated to meet the data sheet specified accuracy.
RSGAIN is user accessible and can be reprogrammed
after module or pack manufacture to improve the current
measurement accuracy. Adjusting RSGAIN can correct
for variation in an external sense resistor’s nominal value
and allows the use of low-cost, nonprecision current-
sense resistors. RSGAIN is an 11-bit value stored in 2
bytes of the parameter EEPROM memory block. The
RSGAIN value adjusts the gain from 0 to 1.999 in steps
of 0.001 (precisely 2–10). The user must use caution
when programming RSGAIN to ensure accurate current
measurement. When shipped from the factory, the gain
calibration value is stored in two separate locations in the
parameter EEPROM block, RSGAIN, which is reprogram-
mable and FRSGAIN, which is read-only. RSGAIN deter-
mines the gain used in the current measurement. The
3
UNITS: 2–10
MSb
2
UNITS: 1.56μV/R
-3
2
2
2
-4
Current Measurement Gain
2
1
2
-5
LSB—ADDRESS 79h
LSb
SNS
2
0
2
-6
Current Blanking
2
-7
2
-8
2
-9
2
LSb
-10

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