NSI45020JZT1G ON Semiconductor, NSI45020JZT1G Datasheet - Page 2

• Manufacturer Part Number: NSI45020JZT1G
• Description: IC LINEAR
• Manufacturer: ON Semiconductor

Specifications of NSI45020JZT1G

• Constant Current: *
• Constant Voltage: *
• Topology: *
• Number Of Outputs: *
• Internal Driver: *
• Type - Primary: *
• Type - Secondary: *
• Frequency: *
• Voltage - Supply: *
• Voltage - Output: *
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA, SOT-223-4
• Operating Temperature: *
• Current - Output / Channel: *
• Low Level Output Current: 20 mA
• Operating Supply Voltage: 45 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NSI45020JZT1GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I
2. V
3. I
4. f = 1 MHz, 0.02 V RMS.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
5. FR−4 @ 300 mm
6. FR−4 @ 300 mm
7. FR−4 @ 500 mm
8. FR−4 @ 500 mm
9. FR−4 @ 700 mm
10. FR−4 @ 700 mm
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Anode−Cathode Voltage
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Capacitance @ Vak = 0 V (Note 4)
THERMAL CHARACTERISTICS
Total Device Dissipation (Note 5) T
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 5)
Total Device Dissipation (Note 6) T
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) T
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Lead 4 (Note 7)
Total Device Dissipation (Note 8) T
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Lead 4 (Note 8)
Total Device Dissipation (Note 9) T
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Lead 4 (Note 9)
Total Device Dissipation (Note 10) T
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Junction−to−Lead 4 (Note 10)
Junction and Storage Temperature Range
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
reg(SS)
reg(P)
overhead
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
non−repetitive pulse test. Pulse width t ≤ 1.0 msec.
steady state is the voltage (Vak) applied for a time duration ≥ 35 sec, using FR−4 @ 300 mm
= V
in
− V
2
2
2
2
2
2
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
LEDs
(T
. V
A
= 25°C unless otherwise noted)
overhead
Rating
Characteristic
A
A
A
A
A
Characteristic
is typical value for 80% I
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
(T
A
= 25°C unless otherwise noted)
Human Body Model
Machine Model
http://onsemi.com
reg(SS)
.
2
Vak Max
Symbol
T
ESD
J
V
, T
R
stg
V
Symbol
I
overhead
reg(SS)
I
reg(P)
C
C
Symbol
T
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R
R
R
R
R
R
J
P
P
P
P
P
P
, T
−55 to +150
θ
θ
θ
θ
θ
θ
17.15
D
D
D
D
D
D
JA
JL4
JA
JL4
JA
JL4
JA
JL4
JA
JL4
JA
JL4
Min
17
stg
Value
500
45
2
2 oz. Copper traces, in still air.
−55 to +150
Typ
1.8
7.4
Class C
Class 2
20
31
10.53
12.05
11.36
1008
1136
1238
1420
1316
1506
Max
8.06
33.3
9.09
33.3
33.7
32.1
32.4
30.8
124
110
101
9.9
88
95
83
Max
23.4
23
Unit
mV
°C
V
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mW
mW
mW
mW
mW
mW
°C
Unit
mA
mA
pF
pF
V