NSI45090DDT4G ON Semiconductor, NSI45090DDT4G Datasheet - Page 2

• Manufacturer Part Number: NSI45090DDT4G
• Description: IC LED DRIVER/REG CCR DPAK-4
• Manufacturer: ON Semiconductor
• Type: Linear (Non-Switching)r

Specifications of NSI45090DDT4G

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Operating Temperature: -55°C ~ 150°C
• Number Of Outputs: 1
• Current - Output / Channel: 90mA
• Internal Switch(s): No
• Maximum Supply Current: 160 mA
• Maximum Power Dissipation: 2.7 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Voltage - Output: -
• Frequency: -
• Efficiency: -
• Topology: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. I
2. V
3. I
4. f = 1 MHz, 0.02 V RMS.
NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9.
5. FR−4 @ 300 mm
6. FR−4 @ 300 mm
7. FR−4 @ 500 mm
8. FR−4 @ 500 mm
9. FR−4 @ 700 mm
10. FR−4 @ 700 mm
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
Anode−Cathode Voltage
Reverse Voltage
Operating and Storage Junction Temperature Range
ESD Rating:
Steady State Current @ Vak = 7.5 V (Note 1)
Voltage Overhead (Note 2)
Pulse Current @ Vak = 7.5 V (Note 3)
Capacitance @ Vak = 7.5 V (Note 4)
Capacitance @ Vak = 0 V (Note 4)
THERMAL CHARACTERISTICS
Total Device Dissipation (Note 5) T
Thermal Resistance, Junction−to−Ambient (Note 5)
Thermal Reference, Junction−to−Lead 4 (Note 5)
Total Device Dissipation (Note 6) T
Thermal Resistance, Junction−to−Ambient (Note 6)
Thermal Reference, Junction−to−Lead 4 (Note 6)
Total Device Dissipation (Note 7) T
Thermal Resistance, Junction−to−Ambient (Note 7)
Thermal Reference, Junction−to−Lead 4 (Note 7)
Total Device Dissipation (Note 8) T
Thermal Resistance, Junction−to−Ambient (Note 8)
Thermal Reference, Junction−to−Lead 4 (Note 8)
Total Device Dissipation (Note 9) T
Thermal Resistance, Junction−to−Ambient (Note 9)
Thermal Reference, Junction−to−Lead 4 (Note 9)
Total Device Dissipation (Note 10) T
Thermal Resistance, Junction−to−Ambient (Note 10)
Thermal Reference, Junction−to−Lead 4 (Note 10)
Junction and Storage Temperature Range
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
Derate above 25°C
reg(SS)
reg(P)
overhead
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical
measurements and method of attachment.
non−repetitive pulse test. Pulse width t ≤ 300 msec.
steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using FR−4 @ 300 mm
= V
in
− V
2
2
2
2
2
2
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
, 1 oz. copper traces, still air.
, 2 oz. copper traces, still air.
LEDs
(T
. V
A
= 25°C unless otherwise noted)
overhead
Rating
Characteristic
A
A
A
A
A
Characteristic
is typical value for 65% I
A
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
= 25°C
(T
A
= 25°C unless otherwise noted)
Human Body Model
Machine Model
http://onsemi.com
reg(SS)
.
2
Vak Max
Symbol
T
ESD
J
V
, T
R
stg
V
Symbol
I
overhead
reg(SS)
I
reg(P)
C
C
Symbol
T
R ψ
R ψ
R ψ
R ψ
R ψ
R ψ
R
R
R
R
R
R
J
P
P
P
P
P
P
, T
−55 to +150
θ
θ
θ
θ
θ
θ
D
D
D
D
D
D
76.5
86.2
JA
JL4
JA
JL4
JA
JL4
JA
JL4
JA
JL4
JA
JL4
Min
stg
Value
500
45
2
2 oz. Copper traces, in still air.
−55 to +150
Class 3A
Typ
103
1.8
Class B
90
17
70
14.16
16.67
16.64
19.53
18.47
21.71
1771
2083
2080
2441
2309
2713
Max
70.6
60.1
51.2
54.1
46.1
6.8
6.3
6.5
5.9
6.2
5.7
60
103.5
119.6
Max
Unit
mV
°C
V
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Unit
mW
mW
mW
mW
mW
mW
°C
Unit
mA
mA
pF
pF
V