MCP1406-E/P Microchip Technology, MCP1406-E/P Datasheet - Page 3

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MCP1406-E/P

Manufacturer Part Number
MCP1406-E/P
Description
IC MOSFET DVR 6A 8DIP
Manufacturer
Microchip Technology
Type
Dual High Speed Driverr
Datasheet

Specifications of MCP1406-E/P

Number Of Outputs
1
Package / Case
8-DIP (0.300", 7.62mm)
Configuration
Low-Side
Input Type
Inverting
Delay Time
40ns
Current - Peak
6A
Number Of Configurations
1
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-40°C ~ 125°C
Mounting Type
Through Hole
Rise Time
30 ns
Fall Time
30 ns
Supply Voltage (min)
4.5 V
Supply Current
0.25 mA
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 40 C
Number Of Drivers
1
Output Current
6 A
Device Type
MOSFET
Module Configuration
Low Side
Peak Output Current
6A
Output Resistance
2.1ohm
Input Delay
40ns
Output Delay
40ns
Supply Voltage Range
4.5V To 18V
Driver Case Style
DIP
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCP1406-E/P
Manufacturer:
MICROCHIP
Quantity:
12 000
Part Number:
MCP1406-E/PA
Manufacturer:
MICROCHI
Quantity:
20 000
1.0
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ............................... (V
Input Current (V
DC CHARACTERISTICS
© 2006 Microchip Technology Inc.
Electrical Specifications: Unless otherwise indicated, T
Input
Logic ‘1’, High Input Voltage
Logic ‘0’, Low Input Voltage
Input Current
Input Voltage
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection With-
stand Reverse Current
Switching Time (Note 1)
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
3:
ELECTRICAL
CHARACTERISTICS
Parameters
Switching times ensured by design.
Tested during characterization, not production tested.
Valid for AT and MF packages only. T
IN
>V
DD
)................................................50 mA
DD
+ 0.3V) to (GND – 5V)
Sym
V
R
I
V
V
R
V
V
I
V
I
REV
t
t
I
DC
PK
t
t
D1
D2
I
I
IN
OH
OH
DD
OL
OL
R
F
S
S
IH
IN
IL
V
DD
Min
–10
2.4
1.3
4.5
– 0.025
-5
A
= +25°C
A
Typ
130
1.8
1.3
2.1
1.5
1.5
= +25°C, with 4.5V ≤ V
20
20
40
40
35
6
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
V
DD
0.025
Max
18.0
250
100
0.8
2.8
2.5
10
30
30
55
55
+0.3
Units
µA
µA
µA
ns
ns
ns
ns
V
V
V
V
V
Ω
Ω
A
A
A
V
DD
DC Test
0V ≤ V
DC Test
I
I
V
Note 2, Note 3
Duty cycle ≤ 2%, t ≤ 300 µsec.
Figure 4-1, Figure 4-2
C
Figure 4-1, Figure 4-2
C
Figure 4-1, Figure 4-2
Figure 4-1, Figure 4-2
V
V
OUT
OUT
MCP1406/07
≤ 18V.
DD
IN
IN
L
L
= 2500 pF
= 2500 pF
= 3V
= 0V
= 18V (Note 2)
= 10 mA, V
= 10 mA, V
IN
≤ V
Conditions
DD
DD
DD
DS22019A-page 3
= 18V
= 18V

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